FDG312P FDG312P is a P-Channel MOSFET from On Semiconductor with a maximum drain-to-source voltage of 20V and a drain current of 1.2A. It is housed in a SC-88 surface-mount package.
Mfr Part #:

FDG312P

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDG312P is a P-Channel MOSFET from On Semiconductor with a maximum drain-to-source voltage of 20V and a drain current of 1.2A. It is housed in a SC-88 surface-mount package.
✓ Total Stock: 89,878 pcs
$ Price Range: $0.25

FDG312P Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
86,720 pcs
86720 pcs On Request 1 On Request On Request 0242+ On Request On Request
Non-Authorised Inventory information
2,944 pcs
2944 pcs On Request 1 On Request On Request On Request On Request On Request
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172 pcs
172 pcs On Request 1 On Request On Request 1209 On Request On Request
Non-Authorised Inventory information
42 pcs
42 pcs On Request 1 On Request On Request NO DC On Request On Request

FDG312P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDG312P Description

Short technical summary and product information.

The FDG312P is a single P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a maximum drain-to-source voltage (VDS) of 20V and a nominal drain current (ID) of 1.2A at Ta=25°C. The device is designed for low-voltage switching applications.

 

Electrical characteristics include a maximum drain-source on-resistance (RDS(on)) of 180mΩ at VGS=4.5V and ID=1.2A. The gate threshold voltage (VGS(th)) is a maximum of 1.5V at ID=250µA. Total gate charge (QG) is 5nC at VGS=4.5V, and input capacitance (Ciss) is 330pF at VDS=10V, indicating low switching losses. Maximum power dissipation is 750mW at ambient temperature.

 

The FET is supplied in a SC-88 (SC-70-6) surface-mount package, compliant with RoHS3 and REACH unaffected. Operating temperature range is -55°C to +150°C, suitable for industrial and consumer environments.

FDG312P Quick Information

Product Type: Single MOSFET
Canonical Name: FDG312P P-Channel MOSFET
Subcategory: P-Channel

FDG312P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDG312P Estimated Pricing

Qty Low High
1,178+ $0.25 $0.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDG312P Features

  • P-Channel MOSFET with 20V drain-to-source voltage.
  • 1.2A drain current rating at ambient temperature.
  • Low on-resistance of 180mΩ at 4.5V drive.
  • Surface-mount SC-88 (SC-70-6) package.
  • Wide operating temperature range -55°C to +150°C.

FDG312P Applications

  • Load switching in portable electronics.
  • Power management for battery-powered devices.
  • DC-DC converter circuits.
  • General purpose low-voltage switching.
  • Signal multiplexing and analog switching.

FDG312P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (VDS) for the FDG312P?

The maximum drain-to-source voltage (VDS) is 20V.

What is the drain current rating of the FDG312P?

The nominal drain current (ID) is 1.2A at Ta=25°C.

What is the package type for the FDG312P?

The FDG312P is offered in a SC-88 (SC-70-6) surface-mount package.

What is the operating temperature range of the FDG312P?

The operating temperature range is -55°C to +150°C.

Is the FDG312P RoHS compliant?

The FDG312P is listed as RoHS3 Compliant.

What is the maximum drain-source on-resistance (RDS(on)) of the FDG312P?

The maximum RDS(on) is 180mΩ at VGS=4.5V and ID=1.2A.

What is the gate threshold voltage (VGS(th)) of the FDG312P?

The maximum gate threshold voltage is 1.5V at ID=250µA.

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