| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
602,667 pcs
|
602667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDG311N is an N-Channel MOSFET from On Semiconductor, designed for low-voltage switching applications. It features a maximum drain-to-source voltage of 20V and a continuous drain current of 1.9A at ambient temperature.
The device offers a maximum on-resistance of 115 mOhm at a gate drive of 4.5V and 1.9A drain current. The threshold voltage is typically 1.5V maximum. With a maximum gate charge of 4.5 nC and input capacitance of 270 pF, it is suitable for efficient switching at moderate frequencies.
The MOSFET is housed in a small SC-88 (SC-70-6) surface mount package, making it ideal for space-constrained designs. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 750 mW.
| Qty | Low | High |
|---|---|---|
| 1,047+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V maximum.
1.9A at ambient temperature.
115 mOhm maximum at 1.9A and 4.5V gate drive.
SC-88 (SC-70-6) surface mount.
-55°C to 150°C junction temperature.
According to the database, it is RoHS3 compliant, but this value is unverified.
4.5 nC maximum at 4.5V.