FDG1024NZ

The FDG1024NZ is a dual N-channel logic level enhancement mode MOSFET manufactured by onsemi. It uses a high cell density DMOS process to minimize on-state resistance, making it suitable for low-voltage switching applications. The device can replace bipolar digital transistors and small signal MOSFETs in circuits requiring low gate drive.

Electrical specifications include a 20 V drain-to-source voltage rating, ±8 V maximum gate-to-source voltage, and 1.2 A continuous drain current at 25°C ambient. Pulsed drain current is rated at 6 A. On-resistance is specified as 175 mΩ maximum at VGS = 4.5 V and ID = 1.2 A, and 389 mΩ maximum at VGS = 1.5 V, enabling operation in 1.5 V logic systems. Maximum gate threshold voltage is 1 V at 250 µA, and gate charge is only 2.6 nC at 4.5 V, offering fast switching with low drive requirements.

The device is available in the compact SC-88/SC-70-6 surface-mount package (6-TSSOP/SOT-363). It provides HBM ESD protection above 2 kV and is RoHS compliant and halogen free. Power dissipation is rated at 360 mW (mounting note 1a) and 300 mW (note 1b), with junction-to-ambient thermal resistance of 350 °C/W and 415 °C/W, respectively. The operating junction temperature range is -55 °C to +150 °C. With its symmetrical pinout and logic-level gate, the FDG1024NZ is well suited for battery-powered portable electronics and low-voltage white goods.