FDFS6N754 N-Channel MOSFET, 30V drain-source voltage, 4A drain current, 56mOhm on-resistance, in 8-SOIC surface mount package.
Mfr Part #:

FDFS6N754

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 30V drain-source voltage, 4A drain current, 56mOhm on-resistance, in 8-SOIC surface mount package.
✓ Total Stock: 841 pcs

FDFS6N754 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
839 pcs
839 pcs On Request 1 On Request On Request 07+ On Request On Request
Non-Authorised Inventory information
2 pcs
2 pcs On Request 1 On Request On Request NO DC On Request On Request

FDFS6N754 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDFS6N754 Description

Short technical summary and product information.

The FDFS6N754 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor (formerly Fairchild Semiconductor). It is designed for low-voltage power switching applications with a maximum drain-source voltage of 30V and continuous drain current rating of 4A. The device features a low on-resistance of 56mOhm maximum at 4A and 10V gate drive, which minimizes conduction losses. The gate threshold voltage is 2.5V maximum at 250µA, and the gate drive voltage range is 4.5V to 10V. The MOSFET includes an isolated Schottky diode for improved efficiency in rectification and flyback circuits. Total gate charge is 6nC at 10V, and input capacitance is 299pF at 15V Vds, enabling fast switching. The device is housed in an 8-SOIC surface mount package with a 0.154" (3.90mm) width. It operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W at ambient temperature. This MOSFET is suitable for DC-DC converters, load switching, and power management in portable electronics.

FDFS6N754 Quick Information

Product Type: N-Channel MOSFET
Series: PowerTrench
Canonical Name: FDFS6N754 N-Channel MOSFET, 30V, 4A, 8-SOIC
Subcategory: N-Channel Power MOSFET

FDFS6N754 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDFS6N754 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 4A continuous drain current rating.
  • Low 56mOhm on-resistance at 10V gate drive.
  • Schottky diode isolated for improved efficiency.
  • Surface mount 8-SOIC package.

FDFS6N754 Applications

  • Ideal for DC-DC converter circuits.
  • Suitable for load switching applications.
  • Used in power management for portable devices.
  • Can be used in low-voltage motor control.

FDFS6N754 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDFS6N754?

The maximum drain-source voltage is 30V.

What is the package type of the FDFS6N754?

The package is 8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDFS6N754 RoHS compliant?

The part is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the maximum drain current?

The maximum continuous drain current is 4A at ambient temperature.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5V at 250µA drain current.

What is the on-resistance?

The maximum on-resistance is 56mOhm at 4A drain current and 10V gate voltage.

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