| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
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2 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDFS2P753AZ, manufactured by ON Semiconductor, is an integrated P-Channel PowerTrench MOSFET and Schottky diode in an 8-SOIC surface-mount package. It is designed for DC-DC conversion applications and supports a maximum drain-to-source voltage of -30V and a continuous drain current of -3A at 25°C, with a pulsed current rating of -16A.
The MOSFET has a maximum on-resistance of 115mΩ at VGS=-10V and ID=-3A, and 180mΩ at VGS=-4.5V and ID=-1.5A. The integrated Schottky diode is electrically independent and offers a maximum forward voltage of 0.45V at 2A and 0.28V at 100mA. The device is rated for a gate-source voltage of ±25V and a junction temperature range of -55°C to +150°C.
Packaged in the industry-standard SO-8 footprint, the device is surface-mountable and available in tape-and-reel packaging with 2500 units per reel and a 12mm tape width. The power dissipation is 3.1W at TC=25°C and 1.6W at TA=25°C, making it suitable for compact power management circuits where space and thermal efficiency are important.
| Qty | Low | High |
|---|---|---|
| 387+ | $0.78 | $0.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is -30V.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also called SO-8.
-55°C to +150°C junction temperature range.
Yes, the datasheet indicates RoHS compliance.
Maximum 115mΩ at VGS=-10V, ID=-3A; maximum 180mΩ at VGS=-4.5V, ID=-1.5A.
The continuous drain current rating is -3A at 25°C ambient; the pulsed drain current is -16A.
Yes, it integrates a P-Channel MOSFET with an electrically independent Schottky diode.