| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40,178 pcs
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40178 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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7,485 pcs
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7485 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
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3,209 pcs
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3209 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
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508 pcs
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508 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDFS2P106A is a 60V, 3A P-Channel PowerTrench MOSFET from ON Semiconductor that integrates a Schottky diode in a single SO-8 package. This device combines the low on-state resistance of a PowerTrench MOSFET with the fast switching characteristics of a Schottky diode, making it ideal for DC-DC converter applications.
Key electrical specifications include a maximum drain-source voltage of 60V, continuous drain current of 3A at 25°C, and a maximum on-resistance of 110 mOhm at Vgs=-10V. The gate threshold voltage ranges from -1V to -3V at Id=-250µA, and the device can be driven with 4.5V or 10V logic levels. The integrated Schottky diode has a forward voltage of less than 0.53V at 1A and is electrically isolated from the MOSFET for design flexibility.
The device is surface mounted in an 8-SOIC package with a standard reel quantity of 2500 units. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 900 mW at 25°C ambient (single operation). The low gate charge (21 nC) and input capacitance (714 pF) enable efficient high-frequency switching.
The maximum drain-source voltage is 60V.
The continuous drain current is 3A at Ta=25°C.
The device is housed in an 8-SOIC (0.154", 3.90mm Width) package.
The operating junction temperature range is -55°C to 150°C.
RoHS3 Compliant (unverified).
The typical gate threshold voltage is -1.6V at Id=-250µA.
Yes, an isolated Schottky diode is integrated.