| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDFS2P102 from On Semiconductor is an integrated P-Channel MOSFET with a Schottky diode in a single SO-8 package. It combines Fairchild's high cell density MOSFET technology with a low forward voltage drop Schottky barrier rectifier, designed for DC/DC converter applications.
Key electrical specifications include a maximum drain-source voltage of -20V, continuous drain current of -3.3A, and pulsed drain current of -20A. On-resistance is typically 100mOhm at VGS=-10V and ID=-3.3A, with a maximum of 125mOhm. The device operates over a junction temperature range of -55°C to +150°C and dissipates up to 900mW at 25°C ambient.
The integrated Schottky diode offers a typical forward voltage of 0.47V at 1A and 25°C, decreasing to 0.39V at 125°C, and can handle an average forward current of 1A. The MOSFET and diode are electrically independent for design flexibility.
Packaged in a surface-mount 8-SOIC (0.154", 3.90mm Width) package with tape and reel packaging of 2500 units. The device is RoHS3 compliant and has an MSL of 1 (Unlimited).
-20 V
-3.3 A
-55°C to +150°C (junction)
Typically 0.100 Ω, maximum 0.125 Ω at ID=-3.3A
Yes, an integrated Schottky diode with average forward current of 1 A is included.
8-SOIC (0.154", 3.90mm Width) surface-mount package
RoHS3 Compliant (unverified)