Mfr Part #:

FDFME3N311ZT

N-Channel MOSFET rated for 30V drain-source voltage and 1.8A continuous drain current. Surface mount in a 6-UMLP package.

✓ Total Stock: 4,849 pcs

$ Price Range: $0.36

FDFME3N311ZT Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	4,849 pcs On Request	4849 pcs	On Request	1	On Request	On Request	1248+	On Request	On Request

FDFME3N311ZT Description

Short technical summary and product information.

The FDFME3N311ZT is an N-Channel enhancement-mode MOSFET from On Semiconductor, designed for low-voltage switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 1.8A at ambient temperature. The device offers a low on-resistance of 299 mOhm maximum at Vgs=4.5V and Id=1.6A, enabling efficient power management.

With a gate threshold voltage of 1.5V maximum at Id=250µA, the MOSFET can be driven by low-voltage logic signals. The input capacitance is 75 pF at Vds=15V, and the gate charge is 1.4 nC at Vgs=4.5V, allowing fast switching with minimal gate drive power.

The device is housed in a compact 6-UFDFN exposed pad package (6-UMLP 1.6x1.6mm), suitable for space-constrained designs. It operates over a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 600mW at ambient temperature.

FDFME3N311ZT Quick Information

Product Type: MOSFET

Canonical Name: FDFME3N311ZT N-Channel MOSFET, 30V, 1.8A, 6-UMLP

Subcategory: Single MOSFET

FDFME3N311ZT Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Vendor Undefined

REACH Status: REACH Unaffected

FDFME3N311ZT Estimated Pricing

Qty	Low	High
832+	$0.36	$0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDFME3N311ZT Features

N-Channel MOSFET rated for 30V drain-source.
Continuous drain current of 1.8A at ambient.
Low on-resistance of 299 mOhm at 4.5V.
Surface mount 6-UMLP 1.6x1.6mm package.
Wide operating junction temperature range.

FDFME3N311ZT Applications

Ideal for low-voltage DC-DC converters.
Used in load switching and power management.
Suitable for battery-powered portable devices.
Applicable in logic-level gate drive circuits.

FDFME3N311ZT FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the FDFME3N311ZT?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 1.8A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance is 299 mOhm at Vgs=4.5V and Id=1.6A.

What package does the FDFME3N311ZT come in?

It comes in a 6-UFDFN exposed pad package, also known as 6-UMLP (1.6x1.6mm).

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.5V at Id=250µA.

What is the maximum power dissipation?

The maximum power dissipation is 600mW at ambient temperature.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	1.8 A (Ta)
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	75 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	600 mW (Ta)
Rds On (Max) @ Id, Vgs	299 mOhm @ 1.6 A, 4.5 V
Supplier Device Package	6-UMLP (1.6x1.6)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12 V
Vgs(th) (Max) @ Id	1.5 V @ 250 µA