Mfr Part #:

FDFMA3P029Z

P-Channel MOSFET rated for 30V drain-source voltage and 3.3A continuous drain current. Features low on-resistance of 87mOhm and is housed in a 6-WDFN exposed pad package.

✓ Total Stock: 15,000 pcs

$ Price Range: $0.19

FDFMA3P029Z Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	15,000 pcs On Request	15000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDFMA3P029Z Description

Short technical summary and product information.

The FDFMA3P029Z is a P-Channel MOSFET from On Semiconductor, designed for power management applications. It utilizes MOSFET (Metal Oxide) technology with a Schottky diode (isolated) feature. The device supports a drain-source voltage of 30V and a continuous drain current of 3.3A at ambient temperature. Its on-resistance is typically 87mOhm maximum at 3.3A and 10V gate drive, enabling efficient switching.

With a gate threshold voltage of 3V maximum at 250µA, the MOSFET requires a low gate drive for turn-on. The total gate charge is 10nC at 10V, and input capacitance is 435pF at 15V drain-source. These parameters indicate suitability for moderate-speed switching applications. The device is rated for a maximum power dissipation of 1.4W at ambient temperature and operates over a junction temperature range of -55°C to 150°C.

Packaged in a 6-WDFN exposed pad surface-mount package, it occupies a compact footprint of 2x2mm (6-MLP). This package offers good thermal performance through the exposed pad. The Mounting Type is Surface Mount, making it suitable for automated assembly in high-volume production.

FDFMA3P029Z Quick Information

Product Type: P-Channel MOSFET

Canonical Name: P-Channel MOSFET, 30V, 3.3A, 6-WDFN Exposed Pad

Subcategory: P-Channel MOSFET

FDFMA3P029Z Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 - Unlimited

REACH Status: REACH Unaffected

FDFMA3P029Z Estimated Pricing

Qty	Low	High
3,000+	$0.19	$0.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDFMA3P029Z Features

P-Channel MOSFET with 30V drain-source voltage.
Continuous drain current rating of 3.3A.
Low on-resistance of 87mOhm at 10V gate drive.
Integrated Schottky diode for improved efficiency.
Surface-mount 6-WDFN exposed pad package.

FDFMA3P029Z Applications

Used in power management and load switching.
Suitable for battery protection circuits.
Ideal for DC-DC converter output stages.

FDFMA3P029Z FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

30V

What is the package type?

6-WDFN Exposed Pad (6-MLP 2x2)

What is the operating temperature range?

-55°C to 150°C (junction)

Is the FDFMA3P029Z RoHS compliant?

RoHS3 compliant (unverified)

What is the gate threshold voltage?

3V maximum at 250µA

What is the on-resistance?

87mOhm maximum at 3.3A and 10V

What is the total gate charge?

10nC at 10V

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	3.3 A (Ta)
Drain to Source Voltage (Vdss)	30 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	435 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.4 W (Ta)
Rds On (Max) @ Id, Vgs	87 mOhm @ 3.3 A, 10 V
Supplier Device Package	6-MLP (2x2)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V @ 250 µA