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FDFMA3N109 N-Channel MOSFET, 30V drain-source voltage, 2.9A continuous drain current, surface mount in 6-MicroFET (2x2) package.
Mfr Part #:

FDFMA3N109

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 30V drain-source voltage, 2.9A continuous drain current, surface mount in 6-MicroFET (2x2) package.
✓ Total Stock: 78,000 pcs
$ Price Range: $0.27

FDFMA3N109 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
78,000 pcs
On Request
78000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDFMA3N109 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDFMA3N109 Description

Short technical summary and product information.

This is an N-Channel MOSFET from On Semiconductor, designed for low-voltage switching applications. It features a drain-source voltage rating of 30V and a continuous drain current of 2.9A.

 

The device offers a maximum on-resistance of 123 mOhm at 2.9A and 4.5V gate drive. Gate charge is 3 nC at 4.5V, and input capacitance is 220 pF at 15V. The gate threshold voltage is 1.5V at 250µA.

 

The MOSFET includes an isolated Schottky diode for improved efficiency. It is surface mounted in a 6-VDFN exposed pad package, specifically the 6-MicroFET (2x2) supplier package. Operating temperature range is -55°C to 150°C.

 

This component is suitable for power management and load switching in compact designs. The small package and low gate charge enable high-frequency operation.

FDFMA3N109 Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: N-Channel MOSFET, 30V Vds, 2.9A Id, 6-MicroFET (2x2) Package
Subcategory: Single N-Channel MOSFET

FDFMA3N109 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDFMA3N109 Estimated Pricing

Qty Low High
3,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDFMA3N109 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current rating of 2.9A.
  • Low on-resistance of 123 mOhm maximum.
  • Integrated isolated Schottky diode for efficiency.
  • Surface mount in 6-MicroFET (2x2) package.

FDFMA3N109 Applications

  • Power management in portable electronics.
  • Load switching for low-voltage circuits.
  • DC-DC converter output stage.
  • Battery protection circuits.
  • High-frequency switching applications.

FDFMA3N109 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What package is the FDFMA3N109 available in?

6-VDFN Exposed Pad (6-MicroFET 2x2).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDFMA3N109 RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the maximum on-resistance?

123 mOhm at 2.9A and 4.5V.

What is the gate charge?

3 nC at 4.5V.

Does it have a Schottky diode?

Yes, it features an isolated Schottky diode.

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