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FDFMA2P853 P-Channel MOSFET rated for 20V drain-source voltage and 3A continuous drain current, housed in a 6-MicroFET (2x2) surface-mount package.
Mfr Part #:

FDFMA2P853

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET rated for 20V drain-source voltage and 3A continuous drain current, housed in a 6-MicroFET (2x2) surface-mount package.
✓ Total Stock: 74,266 pcs
$ Price Range: $0.24

FDFMA2P853 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
74,266 pcs
On Request
74266 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDFMA2P853 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDFMA2P853 Description

Short technical summary and product information.

The FDFMA2P853 is a P-Channel enhancement-mode MOSFET designed and manufactured by On Semiconductor. It features a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current of 3A (Ta). The device offers a low on-resistance of 120mOhm maximum at Vgs = 4.5V and Id = 3A, with a gate threshold voltage of 1.3V max at 250µA.

 

For switching applications, the MOSFET accepts drive voltages of 1.8V and 4.5V, with a maximum gate-source voltage rating of ±8V. The input capacitance is 435pF at Vds = 10V, and the maximum gate charge is 6nC at Vgs = 4.5V. The device also integrates an isolated Schottky diode feature.

 

Packaged in a compact 6-VDFN exposed pad surface-mount package (6-MicroFET 2x2), the part operates over a junction temperature range of -55°C to +150°C. Maximum power dissipation is 1.4W at ambient temperature (Ta). This component is RoHS3 compliant and rated MSL Level 1 (Unlimited).

FDFMA2P853 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: FDFMA2P853 - P-Channel MOSFET 20V 3A 6-MicroFET
Subcategory: P-Channel

FDFMA2P853 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL Level 1 Unlimited
REACH Status: REACH Unaffected

FDFMA2P853 Estimated Pricing

Qty Low High
3,000+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDFMA2P853 Features

  • P-Channel MOSFET for 20V operation.
  • 3A continuous drain current rating.
  • 120mOhm on-resistance at 4.5V drive.
  • Built-in isolated Schottky diode.
  • 6-MicroFET surface-mount package.

FDFMA2P853 Applications

  • Load switching for portable devices.
  • Power management in battery circuits.
  • DC-DC converter low-side switching.

FDFMA2P853 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss)?

20V.

What is the continuous drain current rating?

3A at ambient temperature (Ta).

What is the maximum on-resistance?

120mOhm at Id=3A and Vgs=4.5V.

What package does this MOSFET come in?

6-VDFN Exposed Pad (6-MicroFET 2x2).

What is the operating temperature range?

-55°C to +150°C (junction).

Is this component RoHS compliant?

RoHS3 Compliant (unverified).

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