| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,969 pcs
|
37969 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Forward Voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDFMA2P029Z-F106 from On Semiconductor is a P-Channel PowerTrench MOSFET designed for battery charge switch applications in cellular handsets and other ultra-portable devices. It features a very low on-state resistance of 95 mΩ at -4.5V gate drive and 141 mΩ at -2.5V, enabling efficient conduction. The device integrates a Schottky diode with a forward voltage below 0.37V at 500mA and a maximum average forward current of 2A, minimizing conduction losses in a single package solution.
Rated for a maximum drain-source voltage of -20V and continuous drain current of -3.1A at 25°C, the MOSFET can handle pulsed currents up to -6A. Gate threshold voltage is a maximum of 1.5V at 250µA drain current, and gate drive levels of 2.5V and 4.5V are supported. Input capacitance is 720pF at 10V drain-source voltage, and total gate charge is 10nC at 4.5V, suitable for moderate switching applications. HBM ESD protection on the gate is greater than 2.5kV.
Packaged in a compact 6-VDFN exposed pad (MicroFET 2x2mm) with a 0.65mm lead pitch, the device is surface-mount and offers a maximum junction-to-ambient thermal resistance of 86°C/W when mounted on a 1 in² pad of 2 oz copper. Power dissipation is rated at 1.4W at 25°C ambient. The operating temperature range is -55°C to 150°C. The device is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -20 V.
The maximum Rds(on) is 95 mΩ at Vgs = -4.5V, Id = -3.1A.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and Pb-Free according to the datasheet.