| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
82,200 pcs
|
82200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,300 pcs
|
4300 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
1,950 pcs
|
1950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDFMA2P029Z is a P-Channel MOSFET with an integrated Schottky diode from On Semiconductor, designed for battery charge switch applications in portable devices. It features a maximum drain-source voltage of 20V and continuous drain current of 3.1A at 25°C ambient. The MOSFET offers low on-resistance: 95mΩ maximum at Vgs = -4.5V and Id = -3.1A, and 141mΩ at Vgs = -2.5V and Id = -2.5A. The integrated Schottky diode has a reverse voltage rating of 20V and forward voltage of 0.37V at 500mA, with a forward current rating of 2A.
The device is housed in a compact 6-VDFN exposed pad package (6-MicroFET 2x2mm) with surface mount mounting. It provides HBM ESD protection greater than 2.5kV. The operating temperature range is -55°C to 150°C. Power dissipation is 1.4W when mounted on a 1 in² pad of 2 oz copper on FR-4, and 0.7W on minimum pad.
This MOSFET is suitable for battery charge switching, load switching, and power management in cellular handsets and other ultra-portable applications. The low profile package (0.8mm max) and excellent thermal performance make it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
6-VDFN Exposed Pad (6-MicroFET 2x2mm).
-55°C to 150°C (TJ).
Yes, it is RoHS3 compliant and Pb-Free.
95mΩ maximum at Vgs = -4.5V and Id = -3.1A; 141mΩ at Vgs = -2.5V and Id = -2.5A.
1.5V maximum at Id = 250µA.
Reverse voltage 20V, forward voltage 0.37V at 500mA, forward current 2A.