FDFMA2N028Z FDFMA2N028Z is an N-Channel power MOSFET from On Semiconductor with a maximum drain-source voltage of 20V and continuous drain current of 3.7A.
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FDFMA2N028Z

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDFMA2N028Z is an N-Channel power MOSFET from On Semiconductor with a maximum drain-source voltage of 20V and continuous drain current of 3.7A.
✓ Total Stock: 280 pcs

FDFMA2N028Z Available from 1 distributor

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FDFMA2N028Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDFMA2N028Z Description

Short technical summary and product information.

The FDFMA2N028Z is an N-Channel enhancement-mode power MOSFET designed for low-voltage switching applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current of 3.7A at ambient temperature. The device offers a low on-resistance of 68mΩ maximum at a gate-source voltage of 4.5V and drain current of 3.7A, enabling efficient power management.

 

This MOSFET integrates an isolated Schottky diode, which can improve switching performance and reduce external component count. The gate threshold voltage is 1.5V maximum at 250µA, allowing logic-level drive compatibility. Input capacitance is 455pF at 10V, and total gate charge is 6nC at 4.5V, supporting moderate switching speeds.

 

The FDFMA2N028Z is housed in a compact 6-VDFN exposed pad package (6-MicroFET 2x2) for surface mount assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.4W. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).

FDFMA2N028Z Quick Information

Product Type: MOSFET
Series: FDFMA2N028Z
Canonical Name: FDFMA2N028Z N-Channel Power MOSFET
Subcategory: Single N-Channel

FDFMA2N028Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDFMA2N028Z Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • Low on-resistance of 68mΩ at 4.5V gate drive.
  • Continuous drain current rating of 3.7A.
  • Integrated isolated Schottky diode for switching.
  • Compact 6-MicroFET surface mount package.

FDFMA2N028Z Applications

  • Ideal for low-voltage load switching circuits.
  • Used in DC-DC converter power stages.
  • Suitable for battery management and protection.
  • Applicable in portable electronic devices.

FDFMA2N028Z FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDFMA2N028Z?

The maximum drain-source voltage (Vdss) is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 3.7A at ambient temperature (Ta).

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 68mΩ at a gate-source voltage of 4.5V and drain current of 3.7A.

What package does the FDFMA2N028Z come in?

It is available in a 6-VDFN exposed pad package, also known as 6-MicroFET (2x2).

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the FDFMA2N028Z RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

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