| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,939 pcs
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12939 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor FDFM2N111 is an N-Channel enhancement-mode MOSFET designed for low-voltage power management and load switching applications. With a maximum drain-to-source voltage of 20V and a continuous drain current rating of 4A at Ta, it provides efficient switching in compact designs.
Key electrical characteristics include a maximum on-resistance of 100mΩ at Vgs=4.5V and Id=4A, and 273pF typical input capacitance. The gate threshold voltage is a maximum of 1.5V at 250µA, allowing logic-level drive. An integrated Schottky diode enhances switching performance.
The device is offered in a 6-WDFN exposed pad package (supplier device package MicroFET 3x3mm) for surface-mount assembly, with an operating junction temperature range of -55°C to 150°C.
The maximum drain-to-source voltage is 20 V.
The maximum drain current is 4 A at Ta.
The maximum on-resistance is 100 mΩ at Id=4A and Vgs=4.5V.
The device is offered in a 6-WDFN Exposed Pad package (MicroFET 3x3mm) for surface mount.
The junction temperature range is -55°C to 150°C.
The part is marked as RoHS3 Compliant (unverified).
The maximum gate threshold voltage is 1.5 V at Id=250µA.