| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,124 pcs
|
1124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD9507L-F085 is a P-Channel PowerTrench MOSFET from On Semiconductor. It features a maximum drain-source voltage of -40V, continuous drain current of 100A at TC=25°C, and a low on-resistance of 4.4 mΩ max at VGS=-10V, ID=-80A. The gate threshold voltage ranges from -1V to -3V, with typical gate charge of 110 nC and input capacitance of 6250 pF. The device is capable of single pulse avalanche energy of 259 mJ.
Thermal characteristics include a maximum power dissipation of 227W at TC=25°C, operating junction temperature range of -55°C to 175°C, and thermal resistance of 0.66°C/W junction-to-case and 52°C/W junction-to-ambient. The MOSFET is housed in a surface mount DPAK (TO-252-3) package.
This component is AEC Q101 qualified for automotive applications and is RoHS3 compliant, halogen free, and BFR free. Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, electrical power steering, integrated starter/alternator, and primary switch for 12V systems.
The maximum drain-source voltage is -40V (P-channel, negative polarity).
It is available in a TO-252-3 (DPAK) surface mount package.
The junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant and halogen free/BFR free.
The maximum continuous drain current is 100A at TC=25°C.
The gate threshold voltage (Vgs(th)) is -1V min, -2V typical, -3V max at VDS=VGS, ID=250µA.
The single pulse avalanche energy (EAS) is 259 mJ.