| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
65,830 pcs
|
65830 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD9411-F085 is an N-Channel Power MOSFET from On Semiconductor, designed for high-efficiency power switching applications. It features a drain-source voltage rating of 40V and a continuous drain current of 15A at case temperature (Tc). The device offers a low maximum on-resistance of 7.8 mΩ at 15A and 10V gate drive, with a typical value of 6.2 mΩ.
Key electrical characteristics include a gate threshold voltage of 4V maximum at 250µA, input capacitance of 1080 pF at 25V, and total gate charge of 22.5 nC at 10V. The device can dissipate up to 48.4W and operates over a junction temperature range of -55°C to 175°C.
The MOSFET is housed in a surface-mount DPAK package (TO-252-3, also known as TO-252AA), which is suitable for automated assembly. It is designed for use in power management circuits, DC-DC converters, and motor control applications where low conduction losses and fast switching are required.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 40V.
It is available in a TO-252-3 (DPak) surface mount package, also known as TO-252AA.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant, but this status is unverified.
The maximum gate threshold voltage is 4V at a drain current of 250µA.
The maximum on-resistance is 7.8 mΩ at 15A and 10V gate drive, with a typical value of 6.2 mΩ.
The maximum total gate charge is 22.5 nC at 10V gate voltage.