| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD8N50NZTM is an N-channel power MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a drain-source breakdown voltage of 500V (minimum) and a continuous drain current of 6.5A at case temperature.
Electrical characteristics include a low on-resistance of 850 mOhm (maximum) at Vgs = 10V and Id = 3.25A. The device exhibits a gate charge of 18 nC and input capacitance of 735 pF, enabling efficient switching performance. The maximum gate-source voltage is ±25V and the gate threshold voltage is 5V at Id = 250 µA.
The MOSFET is offered in a surface-mount DPAK (TO-252) package with a supplier device package TO-252AA. It operates over a junction temperature range of -55°C to 150°C. The part is listed as RoHS3 compliant and REACH unaffected, though these compliances are unverified.
The FDD8N50NZTM is available in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with a supplier device package of TO-252AA.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant (unverified).
The maximum drain-source voltage is 500V.
The maximum continuous drain current is 6.5A at case temperature.
The maximum on-resistance is 850 mOhm at Id=3.25A and Vgs=10V.
The maximum gate threshold voltage is 5V at Id=250µA.