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FDD8896-G FDD8896-G is a N-Channel MOSFET (Metal Oxide) from On Semiconductor. It features a 30V drain-source voltage, 94A continuous drain current, and low 5.7mOhm on-resistance in a surface-mount TO-252AA package.
Mfr Part #:

FDD8896-G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD8896-G is a N-Channel MOSFET (Metal Oxide) from On Semiconductor. It features a 30V drain-source voltage, 94A continuous drain current, and low 5.7mOhm on-resistance in a surface-mount TO-252AA package.
✓ Total Stock: 2,500 pcs
$ Price Range: $3.92

FDD8896-G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDD8896-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDD8896-G Description

Short technical summary and product information.

The FDD8896-G is a N-Channel power MOSFET from On Semiconductor, utilizing advanced MOSFET technology. It is designed for high-efficiency power management applications. Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 94A at case temperature 25°C, and a low on-resistance of 5.7 mOhm at 35A and 10V gate drive. The device features a maximum gate charge of 60 nC at 10V and input capacitance of 2525 pF at 15V, enabling fast switching. The threshold voltage is 2.5V at 250 µA. The MOSFET is capable of dissipating up to 80W at case temperature 25°C and operates over a junction temperature range of -55°C to 175°C. It is supplied in a surface-mount TO-252-3 (DPak) package, also known as TO-252AA, suitable for automated assembly. This component is suitable for a variety of switching and power conversion circuits.

FDD8896-G Quick Information

Product Type: MOSFET
Canonical Name: FDD8896-G N-Channel MOSFET, 30V, 94A, TO-252AA
Subcategory: N-Channel MOSFET

FDD8896-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD8896-G Estimated Pricing

Qty Low High
2,500+ $3.92 $3.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD8896-G Features

  • N-Channel MOSFET for high-efficiency switching.
  • 30V drain-source voltage rating.
  • 94A continuous drain current at 25°C case.
  • Low 5.7mOhm on-resistance at 35A.
  • Surface-mount TO-252AA package.

FDD8896-G Applications

  • Used in DC-DC converter circuits.
  • Suitable for load switch applications.
  • Ideal for power management in portable devices.
  • Applicable in motor control circuits.

FDD8896-G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDD8896-G?

30 V.

What is the maximum continuous drain current?

94 A at Tc = 25°C.

What is the on-resistance?

5.7 mOhm at 35 A drain current and 10 V gate drive.

What is the operating temperature range?

-55°C to 175°C (junction).

What package is the FDD8896-G available in?

TO-252-3 (DPak), also known as TO-252AA.

Is the FDD8896-G RoHS compliant?

RoHS3 compliant (unverified).

What is the gate charge?

60 nC at 10 V gate drive.

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