| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The FDD8880_NL is an N-Channel enhancement mode power MOSFET from On Semiconductor. It features a maximum drain-source voltage of 30V and a continuous drain current of 58A (Tc) or 13A (Ta). The device achieves a low on-resistance of 9mOhm maximum at 35A drain current and 10V gate drive. The gate threshold voltage is 2.5V maximum at 250µA drain current.
This MOSFET is designed for high-efficiency power conversion applications. It offers a gate charge of 31nC at 10V and an input capacitance of 1260pF at 15V drain-source voltage, enabling fast switching. The maximum power dissipation is 55W (Tc) with an operating junction temperature range of -55°C to 175°C.
The device is supplied in a surface mount TO-252-3 (DPak) package, suitable for compact PCB layouts. It is commonly used in DC-DC converters, power management circuits, and motor control applications.
| Qty | Low | High |
|---|---|---|
| 466+ | $0.64 | $0.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
58A at case temperature (Tc) and 13A at ambient temperature (Ta).
9mOhm at 35A drain current and 10V gate-source voltage.
-55°C to 175°C (junction temperature).
TO-252-3 (DPak) surface mount package.
The component is listed as RoHS3 compliant, but this status is unverified.
Maximum 2.5V at 250µA drain current.