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FDD8880 N-Channel MOSFET with 30V drain-source voltage, 13A (Ta) and 58A (Tc) drain current. Features low on-resistance of 9mOhm at 10V gate drive.
Mfr Part #:

FDD8880

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 30V drain-source voltage, 13A (Ta) and 58A (Tc) drain current. Features low on-resistance of 9mOhm at 10V gate drive.
✓ Total Stock: 390,557 pcs
$ Price Range: $0.34 - $1.28

FDD8880 Available from 7 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDD8880 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDD8880 Description

Short technical summary and product information.

The FDD8880 is an N-Channel MOSFET from ON Semiconductor designed for low-voltage power switching applications. It features a drain-source voltage rating of 30V and a maximum drain current of 13A at 25°C ambient temperature or 58A at case temperature. The device offers a low on-resistance of 9mOhm maximum at 35A drain current with 10V gate drive, minimizing conduction losses.

 

Gate charge is 31nC at 10V, enabling efficient switching performance. Input capacitance is 1260pF at 15V drain-source voltage. The gate threshold voltage is 2.5V maximum at 250µA drain current, and the gate-source voltage range is ±20V. Drive voltage is specified at 4.5V and 10V for optimized Rds(on).

 

The MOSFET is housed in a surface mount TO-252-3 (DPak) package with a supplier device package of TO-252AA. Operating junction temperature range is -55°C to 175°C, suitable for demanding environments.

FDD8880 Quick Information

Product Type: Single MOSFET
Series: PowerTrench
Canonical Name: N-Channel MOSFET, 30V Drain-Source, 13A/58A Drain Current, TO-252AA
Subcategory: N-Channel MOSFET

FDD8880 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD8880 Estimated Pricing

Qty Low High
1+ $1.28 $1.28
10+ $0.80 $0.80
100+ $0.53 $0.53
500+ $0.41 $0.41
1,000+ $0.38 $0.38
2,500+ $0.38 $0.38
5,000+ $0.36 $0.36
10,000+ $0.35 $0.35
25,000+ $0.34 $0.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD8880 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Maximum drain current of 13A at 25°C.
  • Low on-resistance of 9mOhm at 10V.
  • Gate charge of 31nC for efficient switching.
  • Surface mount TO-252AA package.

FDD8880 Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management systems.
  • Ideal for load switching applications.
  • Common in battery protection circuits.
  • Applicable for motor drive control.

FDD8880 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the maximum drain current?

13A at 25°C ambient, 58A at case temperature.

What is the on-resistance?

9mOhm maximum at 35A, 10V gate drive.

What is the gate charge?

31nC at 10V gate-source voltage.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What is the package type?

TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package TO-252AA.

What is the gate threshold voltage?

2.5V maximum at 250µA drain current.

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