FDD8770 N-Channel MOSFET with 25V drain-source voltage and 35A continuous drain current. Low 4mOhm on-resistance in a TO-252AA surface mount package.
Mfr Part #:

FDD8770

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 25V drain-source voltage and 35A continuous drain current. Low 4mOhm on-resistance in a TO-252AA surface mount package.
✓ Total Stock: 4,130 pcs
$ Price Range: $0.40 - $1.94

FDD8770 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,711 pcs
3711 pcs On Request 1 On Request On Request 11+ On Request On Request
Non-Authorised Inventory information
419 pcs
419 pcs On Request 1 On Request On Request On Request On Request On Request

FDD8770 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD8770 Description

Short technical summary and product information.

The FDD8770 is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for general-purpose switching applications requiring efficient power management.

 

It features a drain-source voltage (Vdss) of 25V and a continuous drain current of 35A at 25°C. The maximum on-resistance is 4mOhm at 35A and 10V gate drive, enabling low conduction losses. The total gate charge is 73nC, and input capacitance is 3720pF, making it suitable for moderate switching speeds.

 

The device can operate over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 115W. It is housed in a surface-mount TO-252-3 (DPak) package, also designated as TO-252AA. The MOSFET is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).

 

This MOSFET is suitable for applications such as DC-DC converters, load switches, and power management in battery-powered devices. Its low on-resistance and high current capability make it an efficient choice for power distribution.

FDD8770 Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDD8770 N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

FDD8770 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD8770 Estimated Pricing

Qty Low High
1+ $1.94 $1.94
10+ $1.20 $1.20
100+ $0.79 $0.79
500+ $0.62 $0.62
1,000+ $0.53 $0.53
2,500+ $0.48 $0.48
5,000+ $0.43 $0.43
10,000+ $0.41 $0.41
25,000+ $0.40 $0.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD8770 Features

  • N-Channel MOSFET for switching applications.
  • 25V drain-source voltage rating.
  • 35A continuous drain current capability.
  • Low 4mOhm on-resistance at 10V drive.
  • Surface mount TO-252AA package.

FDD8770 Applications

  • DC-DC converter power switching.
  • Load switch for portable electronics.
  • Power management in battery circuits.
  • Motor control in low-voltage systems.
  • General purpose low-side switching.

FDD8770 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

25V.

What package is the FDD8770 available in?

TO-252-3 (DPak, SC-63) with supplier package TO-252AA.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the FDD8770 RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

What is the maximum on-resistance?

4mOhm at 35A and 10V gate drive.

What is the gate threshold voltage?

Maximum 2.5V at 250µA drain current.

What is the total gate charge?

73nC at 10V gate voltage.

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