FDD86567-F085 N-Channel MOSFET, 60V drain-source voltage, 100A continuous drain current, 3.2mOhm on-resistance, in TO-252 DPAK surface mount package.
Mfr Part #:

FDD86567-F085

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 60V drain-source voltage, 100A continuous drain current, 3.2mOhm on-resistance, in TO-252 DPAK surface mount package.
✓ Total Stock: 12,639 pcs
$ Price Range: $1.62 - $3.53

FDD86567-F085 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
11,020 pcs
11020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,619 pcs
1619 pcs On Request 1 On Request On Request On Request On Request On Request

FDD86567-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD86567-F085 Description

Short technical summary and product information.

This is an N-Channel MOSFET from On Semiconductor, part of the FDD86567 series. It features a drain-source voltage rating of 60V and a continuous drain current of 100A. The on-resistance is a low 3.2 mOhm maximum at 80A and 10V gate drive, enabling high-efficiency power conversion. The gate charge is 82 nC and input capacitance is 4950 pF, supporting fast switching. Maximum power dissipation is 227W. The device is packaged in a surface-mount TO-252 (DPak) with supplier package TO-252AA. Operating temperature ranges from -55°C to 175°C. It is RoHS compliant (RoHS3) and has a moisture sensitivity level of 1 (unlimited).

FDD86567-F085 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FDD86567-F085 N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDD86567-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD86567-F085 Estimated Pricing

Qty Low High
1+ $3.53 $3.53
10+ $2.30 $2.30
100+ $1.62 $1.62
2,500+ $1.62 $1.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD86567-F085 Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current rating of 100A.
  • Ultra-low on-resistance of 3.2 mOhm.
  • Total gate charge of 82 nC for fast switching.
  • Surface-mount DPAK (TO-252AA) package.

FDD86567-F085 Applications

  • Used in high-efficiency DC-DC converters.
  • Ideal for motor drive and power management.
  • Suitable for load switch and battery management circuits.
  • Applicable in synchronous rectification.

FDD86567-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD86567-F085?

The drain-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 100A at Tc.

What is the on-resistance (Rds(on))?

The maximum on-resistance is 3.2 mOhm at 80A and 10V gate drive.

What is the gate charge of this MOSFET?

The maximum gate charge is 82 nC at 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package does the FDD86567-F085 come in?

The device is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package.

Is the FDD86567-F085 RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

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