FDD86252

The FDD86252 is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It uses MOSFET (Metal Oxide) technology and is designed for high-efficiency power switching applications. The device features a drain-to-source voltage (Vdss) of 150V and a continuous drain current of 27A when the case temperature is at Tc, and 5A at ambient temperature Ta. The maximum on-resistance (Rds(on)) is 52mOhm at a gate-source voltage of 10V and drain current of 5A. The gate charge is 16nC at 10V, ensuring fast switching performance. Input capacitance is 985pF at Vds=75V. The gate threshold voltage is 4V maximum at 250µA drain current. The maximum power dissipation is 89W at case temperature Tc, and 3.1W at ambient temperature Ta. The operating junction temperature range is -55°C to 150°C. The device is surface mount and packaged in a TO-252-3 (DPak) case, also known as SC-63, with a supplier device package of TO-252AA. This compact package is suitable for space-constrained designs. The product is listed as RoHS3 compliant (unverified) and has a moisture sensitivity level of 1 (unlimited).

For driving the MOSFET, the recommended gate drive voltage is 6V to 10V for optimal on-resistance. The device is suitable for a variety of power management and conversion circuits, including DC-DC converters, motor drives, and load switches. The low on-resistance and gate charge contribute to high efficiency in switching applications.