FDD86250 FDD86250 is an N-Channel power MOSFET from ON Semiconductor. It features a 150V drain-source voltage, 50A continuous drain current, and low 22mOhm on-resistance in a DPAK surface mount package.
Mfr Part #:

FDD86250

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD86250 is an N-Channel power MOSFET from ON Semiconductor. It features a 150V drain-source voltage, 50A continuous drain current, and low 22mOhm on-resistance in a DPAK surface mount package.
✓ Total Stock: 123,158 pcs
$ Price Range: $0.92 - $1.84

FDD86250 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDD86250 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD86250 Description

Short technical summary and product information.

The FDD86250 is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications. The device has a maximum drain-source voltage (Vdss) of 150V and can handle a continuous drain current of 50A at a case temperature of 25°C (8A at ambient temperature). The on-resistance (Rds(on)) is typically 22mOhm at a gate-source voltage of 10V and drain current of 8A. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA drain current. The input capacitance (Ciss) is 2110pF at 75V Vds, and the total gate charge (Qg) is 33nC at 10V. The device can dissipate up to 132W at Tc=25°C (3.1W at Ta=25°C). The operating junction temperature range is -55°C to 150°C. The FDD86250 is offered in a DPAK (TO-252) surface mount package, suitable for automated assembly and compact PCB layouts.

FDD86250 Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDD86250 N-Channel Power MOSFET 150V 50A DPAK
Subcategory: N-Channel Power MOSFET

FDD86250 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD86250 Estimated Pricing

Qty Low High
1+ $1.84 $1.84
10+ $1.20 $1.20
100+ $0.92 $0.92
2,500+ $0.92 $0.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD86250 Features

  • N-Channel MOSFET with 150V drain-source voltage.
  • Continuous drain current up to 50A at Tc=25°C.
  • Low on-resistance of 22mOhm typical.
  • Surface mount DPAK package for compact designs.
  • Wide operating temperature range -55°C to 150°C.

FDD86250 Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter applications.
  • Ideal for motor control and load switching.
  • Applicable in battery management systems.

FDD86250 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD86250?

The maximum drain-source voltage (Vdss) is 150V.

What is the continuous drain current of the FDD86250?

The continuous drain current is 50A at Tc=25°C and 8A at Ta=25°C.

What is the on-resistance of the FDD86250?

The maximum on-resistance (Rds(on)) is 22mOhm at Id=8A and Vgs=10V.

What is the gate threshold voltage of the FDD86250?

The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.

What is the operating temperature range of the FDD86250?

The operating junction temperature range is -55°C to 150°C.

What package is the FDD86250 available in?

The FDD86250 is available in a DPAK (TO-252) surface mount package.

What is the gate charge of the FDD86250?

The maximum total gate charge (Qg) is 33nC at Vgs=10V.

Home
Account

Categories