FDD86113LZ N-Channel MOSFET rated for 100V drain-source voltage and 4.2A (Ta) / 5.5A (Tc) continuous drain current. Surface mount package in TO-252 (DPAK).
Mfr Part #:

FDD86113LZ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 100V drain-source voltage and 4.2A (Ta) / 5.5A (Tc) continuous drain current. Surface mount package in TO-252 (DPAK).
✓ Total Stock: 2,293 pcs
$ Price Range: $0.69 - $2.02

FDD86113LZ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,293 pcs
2293 pcs On Request 1 On Request On Request On Request On Request On Request

FDD86113LZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD86113LZ Description

Short technical summary and product information.

The FDD86113LZ is an N-Channel MOSFET from ON Semiconductor designed for power switching applications. It features a maximum drain-source voltage of 100V and continuous drain current ratings of 4.2A at ambient temperature (Ta=25°C) and 5.5A at case temperature (Tc=25°C). The device offers a low on-resistance of 104mΩ maximum at 4.2A and 10V gate drive, ensuring efficient power handling.

 

Key electrical characteristics include a gate threshold voltage of 3V maximum at 250µA drain current, total gate charge of 6nC at 10V, and input capacitance of 285pF at 50V drain-source voltage. The MOSFET can operate over a junction temperature range of -55°C to 150°C, with maximum power dissipation of 3.1W at ambient and 29W at case temperature.

 

The device is housed in a surface mount TO-252-3 (DPak) package, also known as SC-63, with supplier device package TO-252AA. This compact package is suitable for automated assembly and space-constrained designs. Typical applications include DC-DC converters, power management circuits, and low-voltage motor drives.

FDD86113LZ Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDD86113LZ N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

FDD86113LZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD86113LZ Estimated Pricing

Qty Low High
1+ $2.02 $2.02
10+ $1.29 $1.29
100+ $0.87 $0.87
500+ $0.69 $0.69
2,500+ $0.69 $0.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD86113LZ Features

  • N-Channel MOSFET with 100V drain-source rating.
  • Continuous drain current up to 5.5A.
  • Low on-resistance of 104 milliohms.
  • Surface mount DPAK package.
  • Operating temperature range -55°C to 150°C.

FDD86113LZ Applications

  • Used in DC-DC converter circuits.
  • Suitable for power management in portable devices.
  • Ideal for motor drive applications.
  • Applicable in load switching circuits.

FDD86113LZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDD86113LZ?

The maximum drain-source voltage (Vdss) is 100V.

What package does the FDD86113LZ come in?

It is available in a surface mount TO-252-3 (DPak) package, also known as SC-63, with supplier device package TO-252AA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDD86113LZ RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified.

What is the continuous drain current rating?

The continuous drain current is 4.2A at ambient temperature (Ta=25°C) and 5.5A at case temperature (Tc=25°C).

What is the typical on-resistance?

The maximum drain-source on-resistance is 104mΩ at Id=4.2A and Vgs=10V.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at Id=250µA.

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