| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
9,514 pcs
|
9514 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
7,346 pcs
|
7346 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD86110 is an N-Channel enhancement mode MOSFET from On Semiconductor, designed for high efficiency power switching applications. It features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12.5A at ambient temperature (25°C) and 50A at case temperature (25°C). The device offers a low on-resistance of 10.2mOhm maximum at Vgs=10V and Id=12.5A, minimizing conduction losses.
Key performance characteristics include a maximum gate charge (Qg) of 35nC at Vgs=10V and an input capacitance (Ciss) of 2265pF at Vds=50V, supporting efficient gate drive and switching. The threshold voltage (Vgs(th)) is 4V maximum at Id=250µA, and the gate-source voltage tolerance is ±20V. Maximum power dissipation is 3.1W at ambient temperature and 127W at case temperature, with an operating junction temperature range of -55°C to +150°C.
The device is housed in a TO-252-3 (DPak) surface mount package (supplier device package TO-252AA), suitable for automated assembly. It is intended for use in power management, DC-DC converters, and load switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.84 | $3.84 |
| 10+ | $2.51 | $2.51 |
| 100+ | $1.76 | $1.76 |
| 2,500+ | $1.76 | $1.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
12.5A at ambient temperature (Ta=25°C) and 50A at case temperature (Tc=25°C).
The maximum on-resistance is 10.2mOhm at Vgs=10V and Id=12.5A.
The junction temperature range is -55°C to +150°C.
It is offered in a TO-252-3 (DPak) surface mount package (supplier device package TO-252AA).