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FDD86102LZ N-Channel MOSFET from ON Semiconductor, rated for 100V drain-source voltage and 8A (Ta) / 35A (Tc) continuous drain current. Features low on-resistance of 22.5mΩ and gate charge of 26nC.
Mfr Part #:

FDD86102LZ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from ON Semiconductor, rated for 100V drain-source voltage and 8A (Ta) / 35A (Tc) continuous drain current. Features low on-resistance of 22.5mΩ and gate charge of 26nC.
✓ Total Stock: 36 pcs
$ Price Range: $1.09 - $2.49

FDD86102LZ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
36 pcs
On Request
36 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDD86102LZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDD86102LZ Description

Short technical summary and product information.

The FDD86102LZ is a N-channel Power MOSFET from ON Semiconductor, designed for high efficiency power management applications. It offers a maximum drain-source voltage of 100V and can handle continuous drain currents up to 8A at ambient temperature (Ta) and 35A at case temperature (Tc). The device features a low drain-source on-resistance of 22.5mOhm at 10V gate drive. The gate threshold voltage is 3V maximum, and the gate charge is 26nC maximum. The input capacitance is 1540pF. This MOSFET is suitable for switching and linear mode applications. The part is surface mount packaged in TO-252-3 (DPak) with supplier package TO-252AA. The operating junction temperature range is -55°C to 150°C. The device is marked RoHS compliant (unverified) and has MSL level 1. It is designed for use in DC-DC converters, power management, and other general purpose switching applications.

FDD86102LZ Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: N-Channel MOSFET, 100V, 8A/35A, DPAK
Subcategory: Single N-Channel MOSFET

FDD86102LZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD86102LZ Estimated Pricing

Qty Low High
1+ $2.49 $2.49
10+ $1.60 $1.60
100+ $1.09 $1.09
2,500+ $1.09 $1.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD86102LZ Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Low on-resistance of 22.5 milliohms maximum.
  • Surface mount DPAK (TO-252) package.
  • Gate charge of 26 nC maximum.
  • Operating temperature range -55°C to 150°C.

FDD86102LZ Applications

  • Used in DC-DC converter power stages.
  • Suitable for load switching applications.
  • Ideal for power management circuits.
  • Applicable in battery powered systems.

FDD86102LZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDD86102LZ?

100V.

What is the package type of the FDD86102LZ?

Surface mount TO-252-3 (DPak) with supplier package TO-252AA.

What is the operating temperature range of the FDD86102LZ?

-55°C to 150°C (junction temperature).

Is the FDD86102LZ RoHS compliant?

The part is marked as RoHS3 compliant, but this is unverified.

What is the maximum drain current of the FDD86102LZ?

8A at ambient temperature (Ta) and 35A at case temperature (Tc).

What is the gate threshold voltage?

3V maximum at Id=250µA.

What is the input capacitance?

1540 pF maximum at Vds=50V.

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