Mfr Part #:

FDD8586

N-Channel PowerTrench MOSFET, 20V drain-source voltage, 35A continuous drain current, low on-resistance of 5.5mΩ at 10V gate drive. Surface mount TO-252AA package.

✓ Total Stock: 5,150 pcs

$ Price Range: $0.53

FDD8586 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	4,780 pcs On Request	4780 pcs	On Request	1	On Request	On Request	12+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	370 pcs On Request	370 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDD8586 Description

Short technical summary and product information.

The FDD8586 is an N-Channel PowerTrench MOSFET designed for high-efficiency DC/DC converter applications. It features a maximum drain-source voltage of 20V and continuous drain current of 35A at case temperature 25°C. The device offers low on-resistance: typically 4.0mΩ at VGS=10V and ID=35A, with a maximum of 5.5mΩ. At logic-level gate drive of 4.5V, typical Rds(on) is 5.7mΩ with 8.5mΩ maximum.

This MOSFET is optimized for fast switching with low gate charge (34nC typical at 10V) and low gate resistance (1.2Ω typical). It is 100% avalanche tested with a single pulse avalanche energy rating of 144mJ. The device is RoHS compliant and comes in a surface mount TO-252AA (DPak) package, suitable for automated assembly.

Thermal characteristics include junction-to-case thermal resistance of 1.94°C/W and junction-to-ambient of 100°C/W (TO-252) or 52°C/W with 1in² copper pad. Operating temperature range is -55°C to 175°C. The part is supplied in tape and reel packaging with 2500 units per reel.

FDD8586 Quick Information

Product Type: MOSFET

Canonical Name: FDD8586 N-Channel PowerTrench MOSFET 20V 35A

Subcategory: N-Channel Power MOSFET

FDD8586 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDD8586 Estimated Pricing

Qty	Low	High
568+	$0.53	$0.53

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD8586 Features

Low on-resistance of 5.5mΩ maximum at 10V gate drive.
High continuous drain current rating of 35A.
Fast switching with 34nC typical gate charge.
100% avalanche tested with 144mJ rating.
RoHS compliant surface mount TO-252AA package.

FDD8586 Applications

Ideal for DC/DC converter synchronous rectification.
Used in VRM for intermediate bus architecture.
Suitable for high-efficiency power management systems.
Designed for desktop and server Vcore regulators.

FDD8586 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

20V.

What is the continuous drain current rating?

35A at case temperature 25°C.

What is the typical on-resistance at 10V gate drive?

4.0mΩ typical, 5.5mΩ maximum.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is this device RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What package is this MOSFET available in?

Surface mount TO-252AA (DPak).

What is the typical gate charge?

34nC typical at VGS=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	35A (Tc)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Input Capacitance	1865pF typ, 2480pF max
Input Capacitance (Ciss) (Max) @ Vds	2480 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max)	77W (Tc)
Rds On (Max) @ Id, Vgs	5.5mOhm @ 35A, 10V
Supplier Device Package	TO-252AA
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA