FDD850N10L N-Channel MOSFET rated for 100V drain-source voltage and 15.7A continuous drain current. Features 75mOhm maximum on-resistance at 10V gate drive.
Mfr Part #:

FDD850N10L

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 100V drain-source voltage and 15.7A continuous drain current. Features 75mOhm maximum on-resistance at 10V gate drive.
✓ Total Stock: 17,150 pcs

FDD850N10L Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
12,500 pcs
12500 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
4,650 pcs
4650 pcs On Request 1 On Request On Request On Request On Request On Request

FDD850N10L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD850N10L Description

Short technical summary and product information.

The FDD850N10L is an N-Channel MOSFET from ON Semiconductor designed for power switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 15.7A at case temperature. The device offers a maximum on-resistance of 75mOhm at 12A drain current and 10V gate drive, ensuring efficient power handling.

 

Key electrical characteristics include a gate threshold voltage of 2.5V maximum at 250µA, input capacitance of 1465pF at 25V, and gate charge of 28.9nC at 10V. The MOSFET can dissipate up to 50W at case temperature and operates over a junction temperature range of -55°C to 175°C.

 

The device is housed in a TO-252-3 (DPak) surface mount package, suitable for automated assembly. It is designed for use in DC-DC converters, power supplies, motor control, and load switching circuits where high efficiency and compact footprint are required.

FDD850N10L Quick Information

Product Type: MOSFET
Canonical Name: FDD850N10L N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDD850N10L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD850N10L Features

  • N-Channel MOSFET with 100V drain-source voltage rating.
  • 15.7A continuous drain current capability.
  • Low on-resistance of 75mOhm at 10V gate drive.
  • Surface mount DPAK package for compact designs.
  • Wide operating temperature range from -55°C to 175°C.

FDD850N10L Applications

  • Suitable for DC-DC converter and power supply circuits.
  • Used in motor control and load switching applications.
  • Ideal for battery management and protection systems.
  • Applicable in automotive and industrial power management.

FDD850N10L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD850N10L?

The drain-source voltage rating is 100V.

What is the continuous drain current of this MOSFET?

The continuous drain current is 15.7A at case temperature.

What is the on-resistance of the FDD850N10L?

The maximum on-resistance is 75mOhm at 12A drain current and 10V gate drive.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5V at 250µA drain current.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the FDD850N10L available in?

It is available in a TO-252-3 (DPak) surface mount package.

Is the FDD850N10L RoHS compliant?

It is listed as RoHS3 Compliant, but this status is unverified.

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