FDD8453LZ N-Channel 40V MOSFET with 50A continuous drain current and 6.7mOhm on-resistance. Surface mount in TO-252AA (DPAK) package.
Mfr Part #:

FDD8453LZ

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel 40V MOSFET with 50A continuous drain current and 6.7mOhm on-resistance. Surface mount in TO-252AA (DPAK) package.
✓ Total Stock: 3,034 pcs
$ Price Range: $0.71 - $2.56

FDD8453LZ Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 20+ On Request On Request
Non-Authorised Inventory information
534 pcs
534 pcs On Request 1 On Request On Request On Request On Request On Request

FDD8453LZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD8453LZ Description

Short technical summary and product information.

The FDD8453LZ is an N-Channel MOSFET from ON Semiconductor designed for high-efficiency power switching. It features a drain-source voltage (Vdss) of 40V and a maximum continuous drain current of 50A at case temperature (Tc) or 16.4A at ambient temperature (Ta). The on-resistance is typically 6.7mOhm at 15A and 10V gate drive, enabling low conduction losses.

 

This MOSFET offers a gate charge of 64nC at 10V and an input capacitance of 3515pF at 20V drain-source, making it suitable for moderate-speed switching applications. The gate threshold voltage is 3V maximum at 250µA, and the gate-source voltage rating is ±20V. Power dissipation is rated at 65W at case temperature and 3.1W at ambient.

 

The device is housed in a surface-mount TO-252-3 (DPak) package with a supplier device package of TO-252AA. It operates over a junction temperature range of -55°C to 150°C. The drive voltage range is 4.5V to 10V for optimal Rds(on) performance.

FDD8453LZ Quick Information

Series: PowerTrench
Subcategory: N-Channel MOSFET

FDD8453LZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD8453LZ Estimated Pricing

Qty Low High
1+ $2.56 $2.56
10+ $1.63 $1.63
100+ $1.10 $1.10
500+ $0.89 $0.89
1,000+ $0.80 $0.80
2,500+ $0.74 $0.74
5,000+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD8453LZ Features

  • N-Channel MOSFET with 40V drain-source voltage.
  • Maximum drain current of 50A at case temperature.
  • Low on-resistance of 6.7mOhm typical.
  • Surface mount in TO-252AA DPAK package.
  • Wide operating temperature range -55°C to 150°C.

FDD8453LZ Applications

  • Suitable for DC-DC converter circuits.
  • Used in power management applications.
  • Ideal for load switching and motor control.

FDD8453LZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the FDD8453LZ?

The package is TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package is TO-252AA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDD8453LZ RoHS compliant?

RoHS3 Compliant (unverified).

What is the maximum drain current?

Maximum drain current is 50A at case temperature (Tc) and 16.4A at ambient temperature (Ta).

What is the on-resistance of the FDD8453LZ?

Maximum on-resistance is 6.7mOhm at 15A drain current and 10V gate-source voltage.

What is the gate charge of this MOSFET?

Maximum gate charge is 64nC at 10V gate-source voltage.

What is the gate threshold voltage?

Maximum gate threshold voltage is 3V at 250µA drain current.

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