| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
658 pcs
|
658 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
658 pcs
|
658 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD8444L is an N-Channel MOSFET from On Semiconductor designed for high-efficiency power switching applications. It features a drain-source voltage rating of 40V and a continuous drain current of 50A at case temperature 25°C (16A at ambient 25°C). The device offers a low maximum on-resistance of 5.2mOhm at Vgs=10V and Id=50A.
The MOSFET utilizes metal-oxide semiconductor technology and supports drive voltages of 4.5V and 10V. It has a total gate charge of 60nC at Vgs=5V and an input capacitance of 5530pF at Vds=25V. The maximum gate threshold voltage is 3V at Id=250µA.
The device is housed in a surface-mount TO-252-3 (DPak) package with supplier device package TO-252AA. It is rated for a maximum power dissipation of 153W at case temperature 25°C and operates over a junction temperature range of -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 168+ | $1.79 | $1.79 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
Surface-mount TO-252-3 (DPak) with supplier device package TO-252AA.
-55°C to 175°C (junction).
RoHS3 compliant (unverified).
50A at case temperature 25°C, 16A at ambient 25°C.
5.2mOhm maximum at Vgs=10V, Id=50A.
3V maximum at Id=250µA.