FDD8444 The FDD8444 is an N-Channel MOSFET from On Semiconductor, rated for 40V drain-source voltage and 145A continuous drain current. It features a low on-resistance of 5.2mOhm and is packaged in a TO-252AA (DPak) surface mount package.
Mfr Part #:

FDD8444

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDD8444 is an N-Channel MOSFET from On Semiconductor, rated for 40V drain-source voltage and 145A continuous drain current. It features a low on-resistance of 5.2mOhm and is packaged in a TO-252AA (DPak) surface mount package.
✓ Total Stock: 16,003 pcs
$ Price Range: $1.00 - $2.32

FDD8444 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
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15,000 pcs
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1,000 pcs
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3 pcs
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FDD8444 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDD8444 Description

Short technical summary and product information.

The FDD8444 is an N-Channel enhancement-mode MOSFET designed for high-current switching applications. It is built with MOSFET (Metal Oxide) technology and offers a maximum drain-source voltage of 40V and a continuous drain current of 145A at a case temperature of 25°C. The maximum on-resistance is 5.2 mOhm at a gate drive voltage of 10V and a drain current of 50A, ensuring low conduction losses. The gate threshold voltage is typically 4V at a drain current of 250µA.

 

Key electrical characteristics include a total gate charge of 116 nC at Vgs=10V and an input capacitance of 6195 pF at Vds=25V, which influence switching performance. The device can dissipate up to 153W of power at the case temperature. It operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding environments.

 

The FDD8444 is offered in a TO-252-3 (DPak) surface mount package, also known as SC-63, with a supplier device package of TO-252AA. The termination style is SMD (SMT) for automated assembly. This MOSFET is commonly used in power management circuits, DC-DC converters, and motor control systems where high efficiency and compact size are required.

FDD8444 Quick Information

Product Type: MOSFET - Single N-Channel
Canonical Name: FDD8444 - N-Channel MOSFET, 40V, 145A, TO-252AA
Subcategory: N-Channel MOSFET

FDD8444 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD8444 Estimated Pricing

Qty Low High
1+ $2.32 $2.32
10+ $1.47 $1.47
100+ $1.00 $1.00
2,500+ $1.00 $1.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD8444 Features

  • N-Channel MOSFET rated for 40V drain-source voltage.
  • Continuous drain current of 145A at case temperature.
  • Low on-resistance of 5.2 mOhm maximum.
  • Surface mount TO-252AA (DPak) package.
  • Wide junction temperature range -55°C to 175°C.

FDD8444 Applications

  • Used in power management and switching circuits.
  • Suitable for DC-DC converters and voltage regulators.
  • Ideal for motor control and high current load switching.
  • Applicable in battery protection and power distribution.

FDD8444 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD8444?

The maximum drain-source voltage is 40V.

What package does the FDD8444 come in?

The FDD8444 is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, with supplier device package TO-252AA.

What is the operating temperature range of the FDD8444?

The junction temperature range is -55°C to 175°C.

Is the FDD8444 RoHS compliant?

The FDD8444 is listed as RoHS3 compliant, but this status is unverified.

What is the on-resistance of the FDD8444?

The maximum on-resistance is 5.2 mOhm at Id=50A and Vgs=10V.

What is the gate threshold voltage of the FDD8444?

The maximum gate threshold voltage is 4V at Id=250µA.

What is the gate charge of the FDD8444?

The maximum total gate charge is 116 nC at Vgs=10V.

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