| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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120,533 pcs
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120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs(th) (Max) @ Id |
The FDD8424H_F085 is a dual N and P-Channel MOSFET array from On Semiconductor, designed for efficient power management and switching applications. It features a 40V drain-source breakdown voltage, with 9A continuous drain current for the N-Channel and 6.5A for the P-Channel. The device offers a low on-resistance of 24mOhm maximum at 10V gate drive, and a logic level gate threshold of 3V maximum, enabling direct drive from low-voltage logic. With a gate charge of 20nC and input capacitance of 1000pF, it supports moderate switching speeds. The MOSFET is housed in a surface mount TO-252-5 (DPAK) package, which provides good thermal performance with a power dissipation of 1.3W. It operates over a wide temperature range of -55°C to 150°C, making it suitable for harsh environments. Typical applications include DC-DC converters, load switches, and power management circuits in portable and automotive systems.
40V.
TO-252-5, DPak (4 Leads + Tab), TO-252AD, with supplier device package TO-252 (DPAK).
-55°C to 150°C (TJ).
Yes, RoHS3 compliant.
9A for N-Channel, 6.5A for P-Channel.
3V maximum at 250µA.
24mOhm at 9A, 10V.