FDD8424H

The FDD8424H from ON Semiconductor is a dual MOSFET array that combines one N-channel and one P-channel transistor in a single TO-252 (DPAK) surface-mount package. The device is rated for a drain-to-source voltage of 40V, with 9A continuous drain current on the N-channel and 6.5A on the P-channel (at Tc=25°C). Maximum on-resistance is 24mΩ at Vgs=10V and Id=9A, and the logic-level gate allows direct control from low-voltage logic circuits.

The MOSFET uses metal-oxide semiconductor (MOSFET) technology and features a maximum gate threshold voltage of 3V at Id=250µA. Total gate charge is 20nC at Vgs=10V, and input capacitance is 1000pF at Vds=20V, making the part suitable for moderate-frequency switching applications. Maximum power dissipation is rated at 1.3W, so thermal design should account for heat sinking in continuous high-current operation.

The package is a TO-252-5 DPak (4 leads + tab), also known as TO-252AD, with a supplier device package of TO-252 (DPAK). It operates over a junction temperature range of -55°C to 150°C. The complementary N/P-channel pair is well suited for load switching, DC-DC converter output stages, and half-bridge configurations.