FDD7N60NZTM The FDD7N60NZTM is an N-Channel MOSFET from ON Semiconductor, rated for 600V drain-source voltage and 5.5A continuous drain current. It features a low on-resistance of 1.25 Ohm and is housed in a surface-mount DPAK (TO-252) package.
Mfr Part #:

FDD7N60NZTM

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDD7N60NZTM is an N-Channel MOSFET from ON Semiconductor, rated for 600V drain-source voltage and 5.5A continuous drain current. It features a low on-resistance of 1.25 Ohm and is housed in a surface-mount DPAK (TO-252) package.
✓ Total Stock: 44,175 pcs
$ Price Range: $1.28

FDD7N60NZTM Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDD7N60NZTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD7N60NZTM Description

Short technical summary and product information.

The FDD7N60NZTM is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications with a drain-source breakdown voltage of 600V and a continuous drain current of 5.5A at case temperature. The device features a maximum on-resistance of 1.25 Ohm at a gate drive of 10V and drain current of 2.75A. Gate charge is 17 nC and input capacitance is 730 pF, enabling efficient switching performance. Maximum power dissipation is 90W, and the operating junction temperature range spans -55°C to 150°C. The MOSFET is offered in a surface-mount DPAK (TO-252-3) package, suitable for automated assembly and compact designs. Typical applications include power supplies, DC-DC converters, and motor control circuits.

FDD7N60NZTM Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel 600V 5.5A MOSFET (DPAK)
Subcategory: N-Channel MOSFET

FDD7N60NZTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD7N60NZTM Estimated Pricing

Qty Low High
2,500+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD7N60NZTM Features

  • 600V drain-source breakdown voltage.
  • 5.5A continuous drain current.
  • Low on-resistance of 1.25 Ohm.
  • Surface mount DPAK package.
  • Wide operating temperature range.

FDD7N60NZTM Applications

  • High-voltage switching power supplies.
  • DC-DC converter circuits.
  • Motor drive inverters.
  • LED lighting drivers.

FDD7N60NZTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

600V.

What is the maximum drain current?

5.5A at case temperature.

What is the on-resistance?

1.25 Ohm maximum at 2.75A drain current and 10V gate drive.

What package is it available in?

Surface mount DPAK (TO-252-3).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is it RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

5V maximum at 250µA drain current.

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