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FDD7N20TM FDD7N20TM is a single N-Channel MOSFET from ON Semiconductor. It features a drain-source voltage of 200V, continuous drain current of 5A, and low on-resistance of 690 mOhm.
Mfr Part #:

FDD7N20TM

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD7N20TM is a single N-Channel MOSFET from ON Semiconductor. It features a drain-source voltage of 200V, continuous drain current of 5A, and low on-resistance of 690 mOhm.
✓ Total Stock: 24,419 pcs
$ Price Range: $0.42 - $1.42

FDD7N20TM Available from 4 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDD7N20TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDD7N20TM Description

Short technical summary and product information.

The FDD7N20TM is a surface-mount N-Channel MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications. The device features a drain-source breakdown voltage of 200V and a continuous drain current of 5A at 25°C case temperature. The maximum on-resistance is 690 mOhm at a gate drive of 10V and 2.5A drain current. The gate threshold voltage is a maximum of 5V at 250 µA drain current. The total gate charge is 6.7 nC at 10V gate-source voltage, and the input capacitance is 250 pF at 25V drain-source voltage. The power dissipation is rated at 43W at 25°C case temperature. The device operates over a junction temperature range of -55°C to 150°C. It is offered in a TO-252-3 (DPak) package, also known as TO-252AA, suitable for surface-mount assembly. The device is RoHS3 compliant and has an MSL of 1. Typical applications include power supplies, DC-DC converters, and motor control circuits.

FDD7N20TM Quick Information

Product Type: N-Channel MOSFET
Canonical Name: On Semiconductor FDD7N20TM N-Channel MOSFET, 200V Vds, 5A Id, TO-252AA
Subcategory: N-Channel MOSFET

FDD7N20TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD7N20TM Estimated Pricing

Qty Low High
1+ $1.42 $1.42
10+ $0.89 $0.89
100+ $0.59 $0.59
500+ $0.46 $0.46
1,000+ $0.42 $0.42
2,500+ $0.42 $0.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD7N20TM Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rated at 5A.
  • On-resistance of 690 mOhm at 10V gate drive.
  • Surface mount TO-252AA package.
  • RoHS3 compliant and MSL level 1.

FDD7N20TM Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for motor control applications.
  • Can be used in high-voltage load switching.

FDD7N20TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD7N20TM?

200V

What is the continuous drain current rating at 25°C?

5A

What is the maximum on-resistance?

690 mOhm at 2.5A and 10V gate drive

What is the operating temperature range?

-55°C to 150°C

What package is the FDD7N20TM available in?

TO-252-3 (DPak) with supplier device package TO-252AA

Is the FDD7N20TM RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

What is the gate threshold voltage?

Maximum 5V at 250 µA drain current

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