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FDD6N50TM-WS N-Channel UniFET MOSFET, 500V drain-source voltage, 6A continuous drain current, 900mΩ on-resistance, in a DPAK surface mount package.
Mfr Part #:

FDD6N50TM-WS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel UniFET MOSFET, 500V drain-source voltage, 6A continuous drain current, 900mΩ on-resistance, in a DPAK surface mount package.
✓ Total Stock: 322 pcs

FDD6N50TM-WS Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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322 pcs
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322 pcs On Request 1 On Request On Request On Request On Request On Request
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FDD6N50TM-WS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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FDD6N50TM-WS Description

Short technical summary and product information.

The FDD6N50TM-WS is an N-Channel UniFET MOSFET from On Semiconductor, designed for high voltage switching applications. It features a drain-source breakdown voltage of 500V and a continuous drain current of 6A at 25°C. The on-resistance is typically 900mΩ at Vgs=10V and Id=3A. This device is based on planar stripe and DMOS technology, offering low gate charge (12.8nC typical) and low reverse transfer capacitance (9pF typical) for improved switching performance. It is 100% avalanche tested and has an improved dv/dt capability. The MOSFET is housed in a DPAK (TO-252) surface mount package, suitable for automated assembly. Typical applications include power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, electronic lamp ballasts, and uninterruptible power supplies (UPS).

FDD6N50TM-WS Quick Information

Product Type: MOSFET
Series: UniFET
Canonical Name: On Semiconductor FDD6N50TM-WS N-Channel UniFET MOSFET, 500V, 6A, DPAK
Subcategory: High Voltage MOSFET

FDD6N50TM-WS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL Level 1 (Unlimited)
REACH Status: REACH Unaffected

FDD6N50TM-WS Features

  • 500V drain-source breakdown voltage.
  • 6A continuous drain current at 25°C.
  • 900mΩ maximum on-resistance at 10V.
  • Low gate charge of 12.8nC typical.
  • 100% avalanche tested for reliability.

FDD6N50TM-WS Applications

  • Power factor correction (PFC) circuits.
  • Flat panel display TV power supplies.
  • ATX and AC-DC power supplies.
  • Electronic lamp ballasts for lighting.
  • Uninterruptible power supply (UPS) systems.

FDD6N50TM-WS FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDD6N50TM-WS?

The maximum drain-source voltage (Vdss) is 500V.

What is the continuous drain current rating?

The continuous drain current (Id) is 6A at a case temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 900mΩ at Vgs=10V and Id=3A.

What package does the FDD6N50TM-WS come in?

It comes in a DPAK (TO-252) surface mount package.

Is the FDD6N50TM-WS RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

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