| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FDD6N50TM is a high-voltage N-Channel MOSFET from ON Semiconductor's UniFET family. It is designed for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, and AC-DC power supplies.
Key electrical specifications include a drain-source breakdown voltage of 500V minimum, continuous drain current of 6A at 25°C case temperature, and a maximum drain-source on-resistance of 900mOhm at Vgs=10V and Id=3A. The device offers low gate charge (12.8 nC typical) and low reverse transfer capacitance (9 pF typical), enabling efficient switching performance.
The MOSFET is packaged in a TO-252-3 (DPak) surface-mount package with a supplier device package of TO-252AA. It supports operating junction temperatures from -55°C to 150°C and dissipates up to 89W at 25°C case temperature. The device is 100% avalanche tested and rated for 270 mJ single-pulsed avalanche energy.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.15 | $2.15 |
| 10+ | $1.35 | $1.35 |
| 100+ | $0.89 | $0.89 |
| 500+ | $0.71 | $0.71 |
| 1,000+ | $0.63 | $0.63 |
| 2,500+ | $0.57 | $0.57 |
| 5,000+ | $0.55 | $0.55 |
| 10,000+ | $0.53 | $0.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 500 V minimum at Id=250µA and Vgs=0V.
The continuous drain current is 6 A at Tc=25°C and 3.8 A at Tc=100°C.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-252-3 (DPak) surface-mount package, supplier package TO-252AA.
The device is listed as RoHS3 compliant, but this status is unverified low-confidence data.
The maximum on-resistance is 900 mOhm at Id=3A and Vgs=10V.
The typical gate charge is 12.8 nC and the maximum is 16.6 nC at Vgs=10V.