FDD6N25TM FDD6N25TM is a 250V N-Channel Power MOSFET from ON Semiconductor, capable of 4.4A continuous drain current and 1.1 Ohm on-resistance. It comes in a surface-mount TO-252 (DPak) package.
Mfr Part #:

FDD6N25TM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD6N25TM is a 250V N-Channel Power MOSFET from ON Semiconductor, capable of 4.4A continuous drain current and 1.1 Ohm on-resistance. It comes in a surface-mount TO-252 (DPak) package.
✓ Total Stock: 11,545 pcs
$ Price Range: $0.24

FDD6N25TM Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,545 pcs
1545 pcs On Request 1 On Request On Request 11+ On Request On Request

FDD6N25TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD6N25TM Description

Short technical summary and product information.

The FDD6N25TM is an N-Channel power MOSFET manufactured by ON Semiconductor. It features a drain-source voltage rating of 250V and a continuous drain current of 4.4A at case temperature. The maximum on-resistance is 1.1 Ohm at 2.2A and 10V gate drive.

 

Key electrical characteristics include a maximum gate threshold voltage of 5V at 250µA, gate charge of 6nC at 10V, and input capacitance of 250pF at 25V. The device can dissipate up to 50W and operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET is offered in a surface-mount TO-252-3 package (also known as DPak, SC-63) with a supplier package designation of TO-252AA. This package is suitable for automated assembly and compact power designs.

FDD6N25TM Quick Information

Product Type: MOSFET
Canonical Name: FDD6N25TM N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

FDD6N25TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

FDD6N25TM Estimated Pricing

Qty Low High
5,000+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD6N25TM Features

  • N-Channel MOSFET with 250V drain-source voltage rating.
  • Continuous drain current up to 4.4A at case temperature.
  • Low on-resistance of 1.1 Ohm maximum at 10V gate drive.
  • Surface mount TO-252 (DPak) package.
  • Maximum power dissipation of 50W.

FDD6N25TM Applications

  • Ideal for power supply and DC-DC converter circuits.
  • Used in motor control and inverter applications.
  • Suitable for load switching and power management.
  • Applicable in high-voltage switching regulators.

FDD6N25TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD6N25TM?

250V.

What package does the FDD6N25TM come in?

TO-252-3, DPak (2 Leads + Tab), SC-63; supplier package TO-252AA.

What is the operating temperature range of the FDD6N25TM?

-55°C to 150°C (junction).

Is the FDD6N25TM RoHS compliant?

RoHS3 compliant (unverified).

What is the on-resistance of the FDD6N25TM?

1.1 Ohm maximum at 2.2A and 10V gate drive.

What is the gate charge of the FDD6N25TM?

6 nC maximum at 10V gate voltage.

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