| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,545 pcs
|
1545 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD6N25TM is an N-Channel power MOSFET manufactured by ON Semiconductor. It features a drain-source voltage rating of 250V and a continuous drain current of 4.4A at case temperature. The maximum on-resistance is 1.1 Ohm at 2.2A and 10V gate drive.
Key electrical characteristics include a maximum gate threshold voltage of 5V at 250µA, gate charge of 6nC at 10V, and input capacitance of 250pF at 25V. The device can dissipate up to 50W and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is offered in a surface-mount TO-252-3 package (also known as DPak, SC-63) with a supplier package designation of TO-252AA. This package is suitable for automated assembly and compact power designs.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
250V.
TO-252-3, DPak (2 Leads + Tab), SC-63; supplier package TO-252AA.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
1.1 Ohm maximum at 2.2A and 10V gate drive.
6 nC maximum at 10V gate voltage.