| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD6N20TM is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications with a drain-source voltage rating of 200V and a continuous drain current of 4.5A. The device features a low on-resistance of 800mOhm at 10V gate drive, enabling efficient power conversion. With a total gate charge of 6.1nC and input capacitance of 230pF, it supports fast switching behavior. The MOSFET can dissipate up to 40W of power and operates over a junction temperature range of -55°C to 150°C. It is housed in a surface mount TO-252AA (DPak) package, suitable for automated assembly. The part is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
The drain-source voltage rating is 200V.
The device is available in TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package is TO-252AA.
The junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 Compliant, but this information is unverified.