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FDD6796A The FDD6796A is a 25V N-Channel power MOSFET from On Semiconductor, rated for 20A continuous drain current at Tambient and 40A at Tcase, with a maximum on-resistance of 5.7 mΩ at 10V gate drive. It is housed in a surface-mount TO-252 (DPak) package.
Mfr Part #:

FDD6796A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDD6796A is a 25V N-Channel power MOSFET from On Semiconductor, rated for 20A continuous drain current at Tambient and 40A at Tcase, with a maximum on-resistance of 5.7 mΩ at 10V gate drive. It is housed in a surface-mount TO-252 (DPak) package.
Total Stock: 2,500 pcs
$ Price Range: $0.22 - $1.02

FDD6796A Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 12+ On Request On Request

FDD6796A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain Current (Maximum @ TC=25 °C, package limited)
Drain Current (Maximum @ Tc=25 °C, silicon limited)
Drain Current, Pulsed
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Forward Transconductance (gfs) (Typ) @ Vds=5V, Id=20A
Gate Charge (Qg) (Max) @ Vgs
Gate Resistance (Rg) (Typ)
Gate to Drain Miller Charge (Qgd) (Typ) @ Vdd=13V, Id=20A
Gate to Source Gate Charge (Qgs) (Typ) @ Vdd=13V, Id=20A
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Power Dissipation (Maximum) @ TA=25°C
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (Typical/Maximum @ If=-20 A, dI/dt=100 A/µs)
SVHC Present
Single Pulse Avalanche Energy (EAS)
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance Junction to Ambient (RθJA)
Thermal Resistance Junction-to-Case (RθJC)
Vgs (Max)
Vgs(th) (Max) @ Id
diode_forward_voltage (Minimum/Maximum @ Is=20 A)
diode_forward_voltage (Minimum/Maximum @ Is=3.1 A)
fall_time (Typical/Maximum @ Vdd=13 V, Id=20 A, Vgs=10 V, Rg=6Ω)
gate_threshold_voltage (Minimum/Typical/Maximum @ ID = 250 µA)
input_capacitance (Typical/Maximum @ Vds=13 V, f=1 MHz)
output_capacitance (Typical/Maximum @ Vds=13 V, f=1 MHz)
rds_on (Typical/Maximum @ Id=15.2 A, Vgs=4.5 V)
rds_on (Typical/Maximum @ Id=20 A, Vgs=10 V)
reverse_recovery_charge (Typical/Maximum @ If=20 A, di/dt=100 A/µs)
reverse_transfer_capacitance (Typical/Maximum @ Vds=13 V, f=1 MHz)
rise_time (Typical/Maximum @ Vdd=13 V, Id=20 A, Vgs=10 V, Rg=6Ω)
total_gate_charge (Typical/Maximum @ Vgs=0 to 10 V, Vdd=13 V, Id=20 A)
total_gate_charge (Typical/Maximum @ Vgs=0 to 5 V, Vdd=13 V, Id=20 A)
turn_off_delay_time (Typical/Maximum @ Vdd=13 V, Id=20 A, Vgs=10 V, Rg=6Ω)
turn_on_delay_time (Typical/Maximum @ Vdd=13 V, Id=20 A, Vgs=10 V, Rg=6Ω)

FDD6796A Description

Short technical summary and product information.

The FDD6796A is an N-Channel power MOSFET designed for efficient power conversion in DC/DC converters and switching applications. It features a drain-source voltage rating of 25V and supports continuous drain currents of 20A at 25°C ambient temperature, 40A at case temperature, and pulsed currents up to 150A.

 

Key electrical characteristics include a typical on-resistance of 4.3 mΩ at 10V gate drive (maximum 5.7 mΩ) and 11.1 mΩ typical at 4.5V drive (maximum 15 mΩ). The device exhibits low gate charge (24 nC typical to 10V) and fast switching speeds with typical turn-on delay of 8 ns and rise time of 7 ns under standard test conditions.

 

The MOSFET is supplied in a surface-mount TO-252-3 (DPak) package (supplier package TO-252AA) and is RoHS3 compliant. It operates over a junction temperature range of -55°C to 175°C, with maximum power dissipation of 42W at case temperature.

FDD6796A Quick Information

Product Type: N-Channel Power MOSFET
Series: FDD6796A
Canonical Name: FDD6796A N-Channel Power MOSFET
Subcategory: Single N-Channel

FDD6796A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDD6796A Estimated Pricing

Qty Low High
1+ $1.02 $1.02
10+ $0.64 $0.64
50+ $0.47 $0.47
100+ $0.41 $0.41
500+ $0.32 $0.32
2,500+ $0.25 $0.25
7,500+ $0.22 $0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD6796A Features

  • 25V drain-source voltage rating.
  • 20A continuous drain current at Ta.
  • Low on-resistance: 5.7 mΩ max at 10V.
  • Fast switching: 8 ns typical turn-on delay.
  • TO-252 (DPak) surface-mount package.

FDD6796A Applications

  • Efficient DC/DC converter designs.
  • Power management for portable devices.
  • Load switching and power distribution.
  • Battery protection circuits.

FDD6796A FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the FDD6796A?

The maximum drain-source voltage (Vdss) is 25 V.

What is the continuous drain current rating at ambient temperature?

At Ta=25°C, the continuous drain current is 20 A.

What is the on-resistance at a gate drive of 10V?

The maximum Rds(on) at Vgs=10V and Id=20A is 5.7 mΩ, with a typical value of 4.3 mΩ.

What is the maximum junction operating temperature?

The maximum junction operating temperature is 175°C, with a range of -55°C to 175°C.

What package is the FDD6796A available in?

The device is housed in a TO-252-3 (DPak) surface-mount package, also known as TO-252AA.

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