| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
452,000 pcs
|
452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD6692 is an N-Channel Power MOSFET manufactured by ON Semiconductor. It uses MOSFET (Metal Oxide) technology and is designed for switching applications.
Key electrical specifications include a drain-source voltage (Vdss) of 30V, continuous drain current of 54A at 25°C, and a maximum on-resistance of 12mOhm at 14A and 10V gate drive. The gate threshold voltage is 3V maximum at 250µA. Input capacitance is 2164pF at 15V. The device can operate over a junction temperature range of -55°C to 175°C.
The MOSFET is offered in a TO-252-3 (DPak) surface mount package. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). The part is suitable for power management and load switching applications.
| Qty | Low | High |
|---|---|---|
| 343+ | $0.88 | $0.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
TO-252-3 (DPak).
-55°C to 175°C (junction).
Yes, RoHS3 compliant (unverified).
54A at 25°C.
12mOhm maximum at 14A, 10V.
25nC maximum at 5V.