| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,452 pcs
|
3452 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD6680A is a 30V N-Channel PowerTrench MOSFET designed by On Semiconductor. It is optimized for DC/DC converter applications, offering low gate charge and fast switching performance.
With a continuous drain current rating of 56A at case temperature 25°C (14A at ambient), and a maximum drain-source voltage of 30V, this MOSFET provides robust power handling. The on-resistance is typically 7mΩ at 10V gate drive and 10mΩ at 4.5V, with maximum values of 9.5mΩ and 13mΩ respectively. Gate threshold voltage is typically 1.8V with a maximum of 3V at 250µA drain current.
The device features low total gate charge (typical 14nC at 5V) and low input capacitance (typical 1425pF), enabling efficient high-frequency switching. It is suitable for synchronous and conventional PWM controllers.
The FDD6680A is offered in a surface mount DPAK (TO-252) package, with a supplier device package of TO-252AA. It has a maximum power dissipation of 60W at case temperature 25°C and operates over a junction temperature range of -55°C to 175°C. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).
The maximum drain-source voltage (Vdss) is 30V.
The FDD6680A is available in a surface mount DPAK (TO-252) package, specifically TO-252AA.
The operating junction temperature range is -55°C to 175°C.
The device is listed as RoHS3 compliant, but this is unverified.
56A at case temperature 25°C, 14A at ambient temperature.
Maximum 9.5mΩ, typical 7mΩ at Id=14A, Vgs=10V.
Maximum 3V, typical 1.8V at Id=250µA.