| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Diode Forward Voltage (Max) | |
| Diode Reverse Recovery Time | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Transconductance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Resistance | |
| Gate-Body Leakage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Turn-Off Delay Time | |
| Turn-Off Fall Time | |
| Turn-On Delay Time | |
| Turn-On Rise Time | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current | |
| drain_source_on_resistance (Maximum @ Id=15 A, Vgs=4.5 V) | |
| drain_source_on_resistance (Typical/Maximum @ Id=16 A, Vgs=10 V) |
The FDD6676AS is an N-Channel MOSFET from ON Semiconductor designed for high-efficiency power switching. It features a maximum drain-source voltage of 30V and a continuous drain current of 90A at 25°C ambient temperature. The device offers a low on-resistance of 5.7mOhm typical at 10V gate drive, minimizing conduction losses. With a gate threshold voltage of 3V maximum and a total gate charge of 64nC, it is suitable for low-voltage switching applications.
This MOSFET is housed in a surface mount TO-252-3 (DPak) package, which provides good thermal performance with a junction-to-ambient thermal resistance of 40°C/W. The operating junction temperature range is -55°C to 150°C, ensuring reliability in demanding environments. Typical applications include DC/DC converters and low-side switching in notebook power systems.
The device includes an integrated body diode with a forward voltage of 0.7V and a reverse recovery time of 25ns, aiding in inductive load switching. The FDD6676AS is RoHS compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
| 10+ | $0.67 | $0.67 |
| 50+ | $0.49 | $0.49 |
| 100+ | $0.43 | $0.43 |
| 500+ | $0.34 | $0.34 |
| 2,500+ | $0.27 | $0.27 |
| 7,500+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The continuous drain current is 90A at 25°C ambient temperature.
The maximum on-resistance is 5.7mOhm at Vgs=10V and Id=16A; typical is 4.7mOhm.
It is available in a surface mount TO-252-3 (DPak) package.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be treated as low confidence.
The maximum gate threshold voltage is 3V at Id=1mA.