| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,480 pcs
|
7480 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD6670AS is a 30V N-Channel MOSFET from On Semiconductor, utilizing PowerTrench technology and integrated SyncFET Schottky diode for improved efficiency in synchronous DC/DC converters. It offers a continuous drain current of 76A at 25°C and a maximum Rds(on) of 8.0mΩ at Vgs=10V. The device is designed for low-side switching in synchronous rectifier applications.
Key electrical characteristics include a typical gate charge of 29nC, input capacitance of 1580pF, and a maximum drain-source avalanche energy of 245mJ. The MOSFET is driven by gate voltages of 4.5V or 10V, with a threshold voltage range of 1V to 3V.
The FDD6670AS is housed in a surface-mount TO-252 (DPak) package, with a maximum power dissipation of 70W (at case temperature 25°C) and junction temperature range of -55°C to 150°C. It is supplied in tape and reel packaging with 2500 units per reel.
Typical applications include DC/DC converters, notebook power supplies, and other low-voltage switching power supplies where low on-resistance and high efficiency are required.
The drain-source voltage rating is 30 V.
It is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
The junction temperature range is -55°C to 150°C.
RoHS status is listed as RoHS3 compliant, but this is unverified.
Continuous drain current is 76 A at 25°C, pulsed current up to 100 A.
Maximum Rds(on) is 8 mΩ at 10V, 13.8A.
The gate threshold voltage is minimum 1V, typical 1.8V, maximum 3V at Id=1mA.