FDD6670AL_NL FDD6670AL_NL is an N-Channel Power MOSFET from On Semiconductor. It features a 30V drain-source breakdown voltage, 84A continuous drain current, and a low 5mOhm on-resistance.
Mfr Part #:

FDD6670AL_NL

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD6670AL_NL is an N-Channel Power MOSFET from On Semiconductor. It features a 30V drain-source breakdown voltage, 84A continuous drain current, and a low 5mOhm on-resistance.
✓ Total Stock: 1,109 pcs
$ Price Range: $1.60

FDD6670AL_NL Available from 1 distributor

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✓ Non-Authorised
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FDD6670AL_NL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDD6670AL_NL Description

Short technical summary and product information.

The FDD6670AL_NL is an N-Channel enhancement-mode Power MOSFET manufactured by On Semiconductor using advanced MOSFET technology. It is designed for high-efficiency power conversion and switching applications.

 

Key electrical specifications include a drain-source breakdown voltage of 30V, a continuous drain current of 84A at Ta, and a maximum drain-source on-resistance of just 5mOhm at Vgs=10V and Id=18A. The device features a typical gate threshold voltage of 3V maximum and supports drive voltages of 4.5V and 10V for optimized Rds(on). Input capacitance is rated at 3845pF maximum at Vds=15V, and total gate charge is 56nC at Vgs=5V.

 

The MOSFET is housed in a surface-mount TO-252-3 (D-Pak) package, also known as SC-63, with a gull-wing lead form. It is rated for operation over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 1.6W at Ta.

FDD6670AL_NL Quick Information

Product Type: Single N-Channel Power MOSFET
Canonical Name: FDD6670AL_NL N-Channel Power MOSFET
Subcategory: Power MOSFET

FDD6670AL_NL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: Non-Compliant

FDD6670AL_NL Estimated Pricing

Qty Low High
188+ $1.60 $1.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD6670AL_NL Features

  • N-Channel Power MOSFET with 30V drain-source voltage.
  • Continuous drain current rated at 84A.
  • Low on-resistance of 5mOhm at 10V gate drive.
  • Surface mount D-Pak (TO-252) package.
  • Operating junction temperature range -55°C to 175°C.

FDD6670AL_NL Applications

  • Suitable for DC-DC converter and power supply designs.
  • Used in motor control and load switching circuits.
  • Ideal for high-efficiency power management systems.

FDD6670AL_NL FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD6670AL_NL?

The drain-source breakdown voltage (Vdss) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 84A at Ta.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance is 5mOhm at Vgs=10V and Id=18A.

What package is the FDD6670AL_NL available in?

It is available in a surface-mount TO-252-3 (D-Pak) package, also known as SC-63.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FDD6670AL_NL RoHS compliant?

The part is marked as RoHS3 compliant, but this status is unverified.

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