| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
716 pcs
|
716 pcs | On Request | 1 | On Request | On Request | 17+16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD6637-F085 is a P-Channel MOSFET from ON Semiconductor, designed for power management applications. It features a drain-source voltage rating of 35V and a continuous drain current of 21A (Tc), making it suitable for medium-power switching circuits. The device has a maximum on-resistance of 11.6mOhm at Vgs=10V, Id=14A, with a typical value of 9.7mOhm. Gate threshold voltage is 3V max at Id=250µA. The MOSFET is capable of handling up to 68W power dissipation at case temperature Tc. It is housed in a surface-mount TO-252-3 (DPak) package, which is compact and suitable for automated assembly. The operating junction temperature range is -55°C to 150°C. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). This MOSFET is suitable for load switching, power distribution, and DC-DC converter applications where a P-channel device is needed for high-side switching.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.47 | $0.47 |
| 5,000+ | $0.44 | $0.44 |
| 7,500+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
35V.
21A at Tc.
11.6mOhm at Vgs=10V, Id=14A.
Maximum 3V at Id=250µA.
TO-252-3 (DPak, SC-63) surface-mount.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).