| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
389 pcs
|
389 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD6637 is a P-Channel power MOSFET from ON Semiconductor designed for high-efficiency power switching applications. It features a 35V drain-source voltage rating and a continuous drain current of 55A at a case temperature of 25°C, with a lower rating of 13A at ambient temperature. The device offers a low on-resistance of 11.6 mOhm at 14A drain current and 10V gate drive, enabling reduced conduction losses.
Key electrical characteristics include a maximum gate threshold voltage of 3V, total gate charge of 63 nC, and input capacitance of 2370 pF. The MOSFET is capable of dissipating up to 57W at the case temperature and 3.1W at ambient temperature, with an operating junction temperature range of -55°C to 150°C.
The FDD6637 is supplied in a surface mount TO-252-3 (DPak) package with supplier device package TO-252AA, suitable for automated assembly. It is intended for use in power management, load switching, and other medium-power applications requiring a P-Channel device.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.33 | $2.33 |
| 10+ | $1.49 | $1.49 |
| 100+ | $1.02 | $1.02 |
| 2,500+ | $1.02 | $1.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 35V.
55A at case temperature (Tc=25°C) and 13A at ambient temperature (Ta=25°C).
Surface mount TO-252-3 (DPak) with supplier device package TO-252AA.
Junction temperature range from -55°C to 150°C.
RoHS3 compliant status is indicated but unverified. Verify with manufacturer.
Maximum 11.6 mOhm at 14A drain current and 10V gate drive.
Maximum 3V at 250µA drain current.