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FDD6635 FDD6635 is an N-Channel power MOSFET from ON Semiconductor with 35V drain-source voltage and 59A continuous drain current at Tc=25°C.
Mfr Part #:

FDD6635

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD6635 is an N-Channel power MOSFET from ON Semiconductor with 35V drain-source voltage and 59A continuous drain current at Tc=25°C.
✓ Total Stock: 84,243 pcs
$ Price Range: $0.47

FDD6635 Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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84,243 pcs
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84243 pcs On Request 1 On Request On Request On Request On Request On Request
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FDD6635 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDD6635 Description

Short technical summary and product information.

The FDD6635 is an N-Channel enhancement mode power MOSFET designed for high efficiency power management applications. It features a maximum drain to source voltage of 35V and a continuous drain current of 59A at Tc=25°C (15A at Ta=25°C). The device offers a low on-resistance of 10mOhm maximum at Id=15A and Vgs=10V, enabling reduced conduction losses.

 

Gate drive voltage range is 4.5V to 10V, with a maximum gate threshold voltage of 3V at Id=250µA. Total gate charge is 36nC at Vgs=10V, and input capacitance is 1400pF at Vds=20V, supporting moderate switching speeds. Maximum power dissipation is 55W at Tc=25°C and 3.8W at Ta=25°C.

 

The device is housed in a surface mount TO-252-3 (DPak) package with supplier device package TO-252AA. Operating junction temperature range is -55°C to 150°C. Suitable for DC-DC converters, load switches, and power management circuits in industrial and consumer electronics.

FDD6635 Quick Information

Product Type: MOSFET
Canonical Name: FDD6635 N-Channel Power MOSFET
Subcategory: Single MOSFET

FDD6635 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDD6635 Estimated Pricing

Qty Low High
2,500+ $0.47 $0.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD6635 Features

  • 35V maximum drain to source voltage.
  • 59A continuous drain current at 25°C.
  • 10mOhm low on-resistance at 15A/10V.
  • Surface mount DPAK (TO-252) package.
  • Operating temperature range -55°C to 150°C.

FDD6635 Applications

  • Used in DC-DC converter circuits.
  • Ideal for load switch applications.
  • Suitable for power management modules.
  • Used in low-voltage motor control.

FDD6635 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain to source voltage of the FDD6635?

The maximum drain to source voltage (Vdss) is 35V.

What is the continuous drain current rating?

The continuous drain current is 59A at Tc=25°C and 15A at Ta=25°C.

What is the on-resistance of the FDD6635?

The maximum on-resistance is 10mOhm at Id=15A and Vgs=10V.

What package is the FDD6635 available in?

The device is available in a surface mount TO-252-3 (DPak) package with supplier device package TO-252AA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDD6635 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified.

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